First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

Mohammed A. Majid, Ahmad A. Al-Jabr, Rami T. Elafandy, Hassan M. Oubei, Mohd S. Alias, Bayan A. Alnahhas, Dalaver H. Anjum, Tien Khee Ng, Mohamed Shehata, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ∼46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ∼4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode.

Original languageBritish English
Title of host publicationNovel In-Plane Semiconductor Lasers XV
EditorsAlexey A. Belyanin, Peter M. Smowton
PublisherSPIE
ISBN (Electronic)9781510600027
DOIs
StatePublished - 2016
EventNovel In-Plane Semiconductor Lasers XV - San Francisco, United States
Duration: 15 Feb 201618 Feb 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9767
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceNovel In-Plane Semiconductor Lasers XV
Country/TerritoryUnited States
CitySan Francisco
Period15/02/1618/02/16

Keywords

  • Cycle annealing
  • InGaP/InAlGaP
  • Lasers
  • Orange & yellow emitters
  • Quantum well intermixing
  • Strain

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