First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

M. A. Majid; A. A. Al-Jabr; H. M. Oubei; M. S. Alias; D. H. Anjum; T. K. Ng; B. S. Ooi

doi:10.1049/el.2015.1658

First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

M. A. Majid
, A. A. Al-Jabr
, H. M. Oubei
, M. S. Alias
, D. H. Anjum
, T. K. Ng
, B. S. Ooi

Physics

King Abdullah University of Science and Technology

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.

Original language	British English
Pages (from-to)	1102-1104
Number of pages	3
Journal	Electronics Letters
Volume	51
Issue number	14
DOIs	https://doi.org/10.1049/el.2015.1658
State	Published - 9 Jul 2015

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10.1049/el.2015.1658

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title = "First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm",

abstract = "The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.",

author = "Majid, \{M. A.\} and Al-Jabr, \{A. A.\} and Oubei, \{H. M.\} and Alias, \{M. S.\} and Anjum, \{D. H.\} and Ng, \{T. K.\} and Ooi, \{B. S.\}",

note = "Publisher Copyright: {\textcopyright} The Institution of Engineering and Technology 2015.",

year = "2015",

month = jul,

day = "9",

doi = "10.1049/el.2015.1658",

language = "British English",

volume = "51",

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journal = "Electronics Letters",

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T1 - First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

AU - Majid, M. A.

AU - Al-Jabr, A. A.

AU - Oubei, H. M.

AU - Alias, M. S.

AU - Anjum, D. H.

AU - Ng, T. K.

AU - Ooi, B. S.

PY - 2015/7/9

Y1 - 2015/7/9

N2 - The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.

AB - The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.

UR - https://www.scopus.com/pages/publications/84936865181

U2 - 10.1049/el.2015.1658

DO - 10.1049/el.2015.1658

M3 - Article

AN - SCOPUS:84936865181

SN - 0013-5194

VL - 51

SP - 1102

EP - 1104

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

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