First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode

M. A. Majid, A. A. Al-Jabr, H. M. Oubei, M. S. Alias, T. K. Ng, D. H. Anjum, B. S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is ∼4.5mW which is the highest ever reported power on this material system at room-temperature.

Original languageBritish English
Title of host publication2015 IEEE Photonics Conference, IPC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages575-576
Number of pages2
ISBN (Electronic)9781479974658
DOIs
StatePublished - 9 Nov 2015
EventIEEE Photonics Conference, IPC 2015 - Reston, United States
Duration: 30 Aug 201531 Aug 2015

Publication series

Name2015 IEEE Photonics Conference, IPC 2015

Conference

ConferenceIEEE Photonics Conference, IPC 2015
Country/TerritoryUnited States
CityReston
Period30/08/1531/08/15

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