First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode

M. A. Majid; A. A. Al-Jabr; H. M. Oubei; M. S. Alias; T. K. Ng; D. H. Anjum; B. S. Ooi

doi:10.1109/IPCon.2015.7323633

First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode

M. A. Majid, A. A. Al-Jabr, H. M. Oubei, M. S. Alias, T. K. Ng, D. H. Anjum, B. S. Ooi

Physics

King Abdullah University of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

We report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is ∼4.5mW which is the highest ever reported power on this material system at room-temperature.

Original language	British English
Title of host publication	2015 IEEE Photonics Conference, IPC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	575-576
Number of pages	2
ISBN (Electronic)	9781479974658
DOIs	https://doi.org/10.1109/IPCon.2015.7323633
State	Published - 9 Nov 2015
Event	IEEE Photonics Conference, IPC 2015 - Reston, United States Duration: 30 Aug 2015 → 31 Aug 2015

Publication series

Name	2015 IEEE Photonics Conference, IPC 2015

Conference

Conference	IEEE Photonics Conference, IPC 2015
Country/Territory	United States
City	Reston
Period	30/08/15 → 31/08/15

Access to Document

10.1109/IPCon.2015.7323633

Cite this

Majid, M. A., Al-Jabr, A. A., Oubei, H. M., Alias, M. S., Ng, T. K., Anjum, D. H., & Ooi, B. S. (2015). First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode. In 2015 IEEE Photonics Conference, IPC 2015 (pp. 575-576). Article 7323633 (2015 IEEE Photonics Conference, IPC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2015.7323633

@inproceedings{8131b252a68d4fd4a1547826a5fd9918,

title = "First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode",

abstract = "We report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is ∼4.5mW which is the highest ever reported power on this material system at room-temperature.",

author = "Majid, {M. A.} and Al-Jabr, {A. A.} and Oubei, {H. M.} and Alias, {M. S.} and Ng, {T. K.} and Anjum, {D. H.} and Ooi, {B. S.}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE Photonics Conference, IPC 2015 ; Conference date: 30-08-2015 Through 31-08-2015",

year = "2015",

month = nov,

day = "9",

doi = "10.1109/IPCon.2015.7323633",

language = "British English",

series = "2015 IEEE Photonics Conference, IPC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "575--576",

booktitle = "2015 IEEE Photonics Conference, IPC 2015",

address = "United States",

}

Majid, MA, Al-Jabr, AA, Oubei, HM, Alias, MS, Ng, TK, Anjum, DH & Ooi, BS 2015, First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode. in 2015 IEEE Photonics Conference, IPC 2015., 7323633, 2015 IEEE Photonics Conference, IPC 2015, Institute of Electrical and Electronics Engineers Inc., pp. 575-576, IEEE Photonics Conference, IPC 2015, Reston, United States, 30/08/15. https://doi.org/10.1109/IPCon.2015.7323633

First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode. / Majid, M. A.; Al-Jabr, A. A.; Oubei, H. M. et al.
2015 IEEE Photonics Conference, IPC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 575-576 7323633 (2015 IEEE Photonics Conference, IPC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode

AU - Majid, M. A.

AU - Al-Jabr, A. A.

AU - Oubei, H. M.

AU - Alias, M. S.

AU - Ng, T. K.

AU - Anjum, D. H.

AU - Ooi, B. S.

PY - 2015/11/9

Y1 - 2015/11/9

N2 - We report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is ∼4.5mW which is the highest ever reported power on this material system at room-temperature.

AB - We report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is ∼4.5mW which is the highest ever reported power on this material system at room-temperature.

UR - http://www.scopus.com/inward/record.url?scp=84964836167&partnerID=8YFLogxK

U2 - 10.1109/IPCon.2015.7323633

DO - 10.1109/IPCon.2015.7323633

M3 - Conference contribution

AN - SCOPUS:84964836167

T3 - 2015 IEEE Photonics Conference, IPC 2015

SP - 575

EP - 576

BT - 2015 IEEE Photonics Conference, IPC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE Photonics Conference, IPC 2015

Y2 - 30 August 2015 through 31 August 2015

ER -

Majid MA, Al-Jabr AA, Oubei HM, Alias MS, Ng TK, Anjum DH et al. First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode. In 2015 IEEE Photonics Conference, IPC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 575-576. 7323633. (2015 IEEE Photonics Conference, IPC 2015). doi: 10.1109/IPCon.2015.7323633

First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this