Finite element simulation and analysis of nanometal-semiconductor contacts

Khouloud Eledlebi, Mohammed Ismail, Moh'D Rezeq

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Nanometal-semiconductor contacts in the sub-20-nm range have shown some deviations in electrical characteristics compared to conventional diodes. We have used a finite element simulation software to build and analyze a proposed geometrical model. We used two different theoretical approaches to study the enhancements of the electric field at the interface, and then the total current across nano-Schottky junction. The results revealed a significant tunneling current at the reverse bias for low n-doped semiconductor substrates and low current at the forward bias. However, in the case of high n-doped semiconductor substrates, the thermionic current is significant at forward biases and the current is low at the reverse bias. We have used our finite element simulation models based on both approaches to fit the existing experimental data of nano-Schottky contacts.

Original languageBritish English
Pages (from-to)355-362
Number of pages8
JournalNanotechnology Reviews
Volume5
Issue number3
DOIs
StatePublished - 1 Jun 2016

Keywords

  • nano-Schottky junctions
  • Nanodevices
  • nanometal particles
  • thermionic current
  • tunneling current

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