@inproceedings{da8cb9fba32646d296ea0210a035db84,
title = "Field emission study of Te nanowire arrays grown on conducting silicon substrate",
abstract = "In this communication, synthesis of high quality and length controlled Te nanowire arrays directly grown on silicon substrate with and without the coating of seed layer by a facile hydrothermal method was reported. The most preferential orientation of tellurium NW's was found along [001] through micro structural investigation. Field emission properties of as grown and annealed under Ar: H 2 reduction atmosphere are studied meticulously. The emission current density of vacuum annealed Te nanowire arrays was found to be 25μA/cm 2 at 3.0 V/μm.",
keywords = "field emission property, Te nanowires",
author = "Changzeng Yan and Raghavan, {C. M.} and Patole, {Shashikant P.} and Yoo, {J. B.} and Kang, {Dae Joon}",
year = "2012",
doi = "10.1109/IVNC.2012.6316972",
language = "British English",
isbn = "9781467319812",
series = "Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012",
pages = "366--367",
booktitle = "Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om",
note = "25th International Vacuum Nanoelectronics Conference, IVNC 2012 ; Conference date: 09-07-2012 Through 13-07-2012",
}