Field emission study of strain controlled ZnO nanowire arrays via a hydrothermal technique

C. M. Raghavan, Changzeng Yan, Shashikant P. Patole, J. B. Yoo, Dae Joon Kang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We report a novel approach to the rational fabrication of high quality strain controlled wurtzite ZnO nanowire arrays on conductive silicon and ITO substrates by a facile hydrothermal method. The quality of the ZnO nanowire arrays is dramatically improved by hanging the substrate above from the bottom of the Teflon lined autoclave. For comparison, the field emission device performance of the ZnO nanowire arrays grown under different experimental processes is investigated. The low turn-on voltage (1.9 V/μm) from field emission measurement was observed from ZnO nanowire arrays grown by substrate hanging growth procedure.

Original languageBritish English
Title of host publicationTechnical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om
Pages364-365
Number of pages2
DOIs
StatePublished - 2012
Event25th International Vacuum Nanoelectronics Conference, IVNC 2012 - Jeju, Korea, Republic of
Duration: 9 Jul 201213 Jul 2012

Publication series

NameTechnical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012

Conference

Conference25th International Vacuum Nanoelectronics Conference, IVNC 2012
Country/TerritoryKorea, Republic of
CityJeju
Period9/07/1213/07/12

Keywords

  • field emission property
  • ZnO nanowires

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