Fast-Response Amorphous In2Te3Short-Wave Infrared (SWIR) Photodetector

Srinivasa Reddy Tamalampudi, Ghada Dushaq, Nitul S. Rajput, Matteo Chiesa, Mahmoud S. Rasras

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Despite the wide applications of Short-Wave Infrared (SWIR) imaging, standard imaging materials require lattice matching and complex fabrication techniques which are relatively expensive. In this work, 50 nm thick amorphous indium telluride (In2Te3) films are RF sputtered on a silicon (Si/SiO2) substrate at 300 °C. The films are used to fabricate back-gated field-effect photodetectors (PDs). The In2Te3 detectors exhibit a broad wavelength response from 406 nm to 1600 nm and a photo responsivity of 0.44 AW-1 under 1310 nm excitation at 5 V bias. Furthermore, an n-type behavior with an electron field-effect mobility of 1.15 cm2V-1s-1 is observed. We also evaluated the frequency response of the PDs under 1310 nm modulated light, a 3dB cut-off frequency of 0.97 MHz is measured. Further, the device exhibits specific detectivity of 1.32 × 109 Jones and very good stability at ambient conditions.

Original languageBritish English
Pages (from-to)2125-2128
Number of pages4
JournalIEEE Electron Device Letters
Volume43
Issue number12
DOIs
StatePublished - 1 Dec 2022

Keywords

  • Amorphous InaTe
  • back-gated photodetector
  • fast response
  • RF-sputtering
  • SWIR detection

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