FAR infrared lasers without inversion based on intersubband transitions in semiconductors

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Abstract

This paper summarizes recent develqJments in the search for materials and designs that can lead to lasing without global population inversion in the far infrared based on intersubband devices. The recent proposal of using the strong k-dependence of the transverse electric dipole moment to filter local inversion of nonequilibrium holes in the valence subbands of III-V quantum wells is discussed.

Original languageBritish English
Title of host publicationPhysics, Chemistry and Application of Nanostructures - Proceedings of the International Conference, NANOMEETING 2009
PublisherWorld Scientific Publishing Co. Pte Ltd
Pages565-569
Number of pages5
ISBN (Print)9814280356, 9789814280358
DOIs
StatePublished - 2009
EventInternational Conference on Physics, Chemistry and Application of Nanostructures, NANOMEETING 2009 - Minsk, Belarus
Duration: 26 May 200929 May 2009

Publication series

NamePhysics, Chemistry and Application of Nanostructures - Proceedings of the International Conference, NANOMEETING 2009

Conference

ConferenceInternational Conference on Physics, Chemistry and Application of Nanostructures, NANOMEETING 2009
Country/TerritoryBelarus
CityMinsk
Period26/05/0929/05/09

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