Fabrication of ultra-thin strained silicon on insulator

T. S. Drake, C. Ní Chléirigh, M. L. Lee, A. J. Pitera, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li, R. Hull, N. Klymko, J. L. Hoyt

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34 Scopus citations


A bond and etch back technique for the fabrication of 13-nm-thick, strained silicon directly on insulator has been developed. The use of a double etch stop allows the transfer of a thin strained silicon layer with across-wafer thickness uniformity comparable to the as-grown epitaxial layers. Surface roughness of less than 1 nm was achieved. Raman analysis confirms strain remains in the thin silicon layers after the removal of the SiGe that induced the strain. Ultra-thin strained silicon-on-insulator (SSOI) substrates are promising for the fabrication of ultra-thin body and double-gate, strained Si metal-oxide semiconductor field-effect transistors (MOSFETs).

Original languageBritish English
Pages (from-to)972-975
Number of pages4
JournalJournal of Electronic Materials
Issue number9
StatePublished - Sep 2003


  • Selective etch
  • SiGe
  • SOI
  • SSOI
  • Strained silicon
  • Wafer bonding


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