Fabrication of high-quality p-MOSFET in Ge Grown heteroepitaxially on Si

Ammar Nayfeh; Chi On Chui; Takao Yonehara; Krishna C. Saraswat

doi:10.1109/LED.2005.846578

Fabrication of high-quality p-MOSFET in Ge Grown heteroepitaxially on Si

Ammar Nayfeh, Chi On Chui, Takao Yonehara, Krishna C. Saraswat

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

94 Scopus citations

Abstract

We have successfully demonstrated high-performance p-MOSFETs in germanium grown directly on Si using a novel heteroepitaxial growth technique, which uses multisteps of hydrogen annealing and growth to confine misfit dislocations near the Ge-Si interface, thus not threading to the surface as expected in this 4.2 % lattice-mismatched system. We used a low thermal budget process with silicon dioxide on germanium oxynitride (GeO_xN_y) gate dielectric and Si_0.75Ge_0.25 gate electrode. Characterization of the device using cross-sectional transmission electron microscopy and atomic force microscopy at different stages of the fabrication illustrates device-quality interfaces that yielded hole effective mobility as high as 250 cm²/Vs.

Original language	British English
Pages (from-to)	311-313
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	5
DOIs	https://doi.org/10.1109/LED.2005.846578
State	Published - May 2005

Keywords

Anneal
Dislocations
Effective field
Effective mobility
Germanium
Germanium oxynitride (GOI)
Heteroepitaxy
Hydrogen
Mobility
MOS devices

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title = "Fabrication of high-quality p-MOSFET in Ge Grown heteroepitaxially on Si",

abstract = "We have successfully demonstrated high-performance p-MOSFETs in germanium grown directly on Si using a novel heteroepitaxial growth technique, which uses multisteps of hydrogen annealing and growth to confine misfit dislocations near the Ge-Si interface, thus not threading to the surface as expected in this 4.2 % lattice-mismatched system. We used a low thermal budget process with silicon dioxide on germanium oxynitride (GeOxNy) gate dielectric and Si0.75Ge0.25 gate electrode. Characterization of the device using cross-sectional transmission electron microscopy and atomic force microscopy at different stages of the fabrication illustrates device-quality interfaces that yielded hole effective mobility as high as 250 cm2/Vs.",

keywords = "Anneal, Dislocations, Effective field, Effective mobility, Germanium, Germanium oxynitride (GOI), Heteroepitaxy, Hydrogen, Mobility, MOS devices",

author = "Ammar Nayfeh and Chui, {Chi On} and Takao Yonehara and Saraswat, {Krishna C.}",

note = "Funding Information: Manuscript received December 2, 2004; revised February 9, 2005. This work was supported by Canon, Inc., and by the Stanford Center for Integrated Systems through the INMP Program. The review of this letter was arranged by Editor K. De Meyer.",

year = "2005",

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doi = "10.1109/LED.2005.846578",

language = "British English",

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AU - Nayfeh, Ammar

AU - Chui, Chi On

AU - Yonehara, Takao

AU - Saraswat, Krishna C.

N1 - Funding Information: Manuscript received December 2, 2004; revised February 9, 2005. This work was supported by Canon, Inc., and by the Stanford Center for Integrated Systems through the INMP Program. The review of this letter was arranged by Editor K. De Meyer.

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N2 - We have successfully demonstrated high-performance p-MOSFETs in germanium grown directly on Si using a novel heteroepitaxial growth technique, which uses multisteps of hydrogen annealing and growth to confine misfit dislocations near the Ge-Si interface, thus not threading to the surface as expected in this 4.2 % lattice-mismatched system. We used a low thermal budget process with silicon dioxide on germanium oxynitride (GeOxNy) gate dielectric and Si0.75Ge0.25 gate electrode. Characterization of the device using cross-sectional transmission electron microscopy and atomic force microscopy at different stages of the fabrication illustrates device-quality interfaces that yielded hole effective mobility as high as 250 cm2/Vs.

AB - We have successfully demonstrated high-performance p-MOSFETs in germanium grown directly on Si using a novel heteroepitaxial growth technique, which uses multisteps of hydrogen annealing and growth to confine misfit dislocations near the Ge-Si interface, thus not threading to the surface as expected in this 4.2 % lattice-mismatched system. We used a low thermal budget process with silicon dioxide on germanium oxynitride (GeOxNy) gate dielectric and Si0.75Ge0.25 gate electrode. Characterization of the device using cross-sectional transmission electron microscopy and atomic force microscopy at different stages of the fabrication illustrates device-quality interfaces that yielded hole effective mobility as high as 250 cm2/Vs.

KW - Anneal

KW - Dislocations

KW - Effective field

KW - Effective mobility

KW - Germanium

KW - Germanium oxynitride (GOI)

KW - Heteroepitaxy

KW - Hydrogen

KW - Mobility

KW - MOS devices

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DO - 10.1109/LED.2005.846578

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SN - 0741-3106

VL - 26

SP - 311

EP - 313

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

Fabrication of high-quality p-MOSFET in Ge Grown heteroepitaxially on Si

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Keywords

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