Fabrication and gas sensing properties of In2 O3 nanopushpins

Ahsanulhaq Qurashi, Toshinari Yamazaki, E. M. El-Maghraby, Toshio Kikuta

Research output: Contribution to journalArticlepeer-review

53 Scopus citations


The growth of nanopushpin-like In2 O3 nanostructures was demonstrated on the silicon substrate by catalyst-free chemical vapor deposition method. Structural analysis revealed single-crystalline nature of the In2 O3 nanopushpins with a cubic crystal structure. The hydrogen sensor made from the In2 O3 nanopushpins showed swift response and excellent stability. The influence of operation temperature on the hydrogen gas sensing property of In2 O3 nanostructures was also investigated. Our results reveal that the sensor response of In2 O3 nanopushpins increases with increasing the operation temperature.

Original languageBritish English
Article number153109
JournalApplied Physics Letters
Issue number15
StatePublished - 2009


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