Fabrication and characterization of ZnO nanowires based UV photodiodes

Lei Luo; Yanfeng Zhang; Samuel S. Mao; Liwei Lin

doi:10.1016/j.sna.2005.06.023

Fabrication and characterization of ZnO nanowires based UV photodiodes

Lei Luo
, Yanfeng Zhang
, Samuel S. Mao
, Liwei Lin

Mechanical & Nuclear Engineering

Research output: Contribution to journal › Article › peer-review

277 Scopus citations

Abstract

A heterojunction of n-type zinc oxide (ZnO) nanowires and p-type silicon has been successfully constructed to demonstrate ultraviolet (UV) photodiodes. The prototype device consists of naturally doped n-type ZnO nanowires grown on top of a (1 0 0) p-silicon substrate by the bottom-up growth process. The diameter of the nanowires is in the range of 70-120 nm, and the length is controlled by the growth time. The isolation is achieved by using spin-on glass (SOG) that also works as the foundation of the top electrode. The current-voltage (I-V) characteristics show the typical rectifying behavior of heterojunctions, and the photodiode exhibits response of ∼0.07 A/W for UV light (365 nm) under a 20 V reverse bias.

Original language	British English
Pages (from-to)	201-206
Number of pages	6
Journal	Sensors and Actuators, A: Physical
Volume	127
Issue number	2
DOIs	https://doi.org/10.1016/j.sna.2005.06.023
State	Published - 13 Mar 2006

Keywords

Photodiodes
UV light
ZnO nanowires

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10.1016/j.sna.2005.06.023

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@article{b3e397c40c78452eb33fd561d41956bd,

title = "Fabrication and characterization of ZnO nanowires based UV photodiodes",

abstract = "A heterojunction of n-type zinc oxide (ZnO) nanowires and p-type silicon has been successfully constructed to demonstrate ultraviolet (UV) photodiodes. The prototype device consists of naturally doped n-type ZnO nanowires grown on top of a (1 0 0) p-silicon substrate by the bottom-up growth process. The diameter of the nanowires is in the range of 70-120 nm, and the length is controlled by the growth time. The isolation is achieved by using spin-on glass (SOG) that also works as the foundation of the top electrode. The current-voltage (I-V) characteristics show the typical rectifying behavior of heterojunctions, and the photodiode exhibits response of ∼0.07 A/W for UV light (365 nm) under a 20 V reverse bias.",

keywords = "Photodiodes, UV light, ZnO nanowires",

author = "Lei Luo and Yanfeng Zhang and Mao, \{Samuel S.\} and Liwei Lin",

note = "Funding Information: The devices presented in this paper were fabricated in the Microlab at UC Berkeley and Lawrence Berkeley National Lab. The authors would like to thank Ron Wilson for taking the SEM photographs. Ms. Lei Luo is supported in part by an ITRI fellowship. This work is supported in part by NSF (ECS-041356) and DOE. ",

year = "2006",

month = mar,

day = "13",

doi = "10.1016/j.sna.2005.06.023",

language = "British English",

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pages = "201--206",

journal = "Sensors and Actuators, A: Physical",

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TY - JOUR

T1 - Fabrication and characterization of ZnO nanowires based UV photodiodes

AU - Luo, Lei

AU - Zhang, Yanfeng

AU - Mao, Samuel S.

AU - Lin, Liwei

N1 - Funding Information: The devices presented in this paper were fabricated in the Microlab at UC Berkeley and Lawrence Berkeley National Lab. The authors would like to thank Ron Wilson for taking the SEM photographs. Ms. Lei Luo is supported in part by an ITRI fellowship. This work is supported in part by NSF (ECS-041356) and DOE.

PY - 2006/3/13

Y1 - 2006/3/13

N2 - A heterojunction of n-type zinc oxide (ZnO) nanowires and p-type silicon has been successfully constructed to demonstrate ultraviolet (UV) photodiodes. The prototype device consists of naturally doped n-type ZnO nanowires grown on top of a (1 0 0) p-silicon substrate by the bottom-up growth process. The diameter of the nanowires is in the range of 70-120 nm, and the length is controlled by the growth time. The isolation is achieved by using spin-on glass (SOG) that also works as the foundation of the top electrode. The current-voltage (I-V) characteristics show the typical rectifying behavior of heterojunctions, and the photodiode exhibits response of ∼0.07 A/W for UV light (365 nm) under a 20 V reverse bias.

AB - A heterojunction of n-type zinc oxide (ZnO) nanowires and p-type silicon has been successfully constructed to demonstrate ultraviolet (UV) photodiodes. The prototype device consists of naturally doped n-type ZnO nanowires grown on top of a (1 0 0) p-silicon substrate by the bottom-up growth process. The diameter of the nanowires is in the range of 70-120 nm, and the length is controlled by the growth time. The isolation is achieved by using spin-on glass (SOG) that also works as the foundation of the top electrode. The current-voltage (I-V) characteristics show the typical rectifying behavior of heterojunctions, and the photodiode exhibits response of ∼0.07 A/W for UV light (365 nm) under a 20 V reverse bias.

KW - Photodiodes

KW - UV light

KW - ZnO nanowires

UR - https://www.scopus.com/pages/publications/33644902099

U2 - 10.1016/j.sna.2005.06.023

DO - 10.1016/j.sna.2005.06.023

M3 - Article

AN - SCOPUS:33644902099

SN - 0924-4247

VL - 127

SP - 201

EP - 206

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

IS - 2

ER -

Fabrication and characterization of ZnO nanowires based UV photodiodes

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