Extracting piezoresistance in SiNWs using thermal induced buckling of micro-bridges

Chee Chung Wong, Pavel Neuzil, Ajay Agarwal, Julien Reboud, Kin Liao

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The recent reports on giant piezoresistance effect in highly resistive silicon nanowires (SiNWs) have offer greater sensitivity in stress measurements. Despite enhanced sensitivity, the piezoresistance of highly conductive silicon are preferred as they are less prone to thermal noise and hence better accuracy. Here we report a thermal induced buckled micro-bridge technique to accurately characterize the temperature dependent piezoresistivity effect in SiNWs. Phosphorus doped (110) SiNWs with 50 nm wide, 60 nm thick and 100 μm in length were encapsulated within SiO2 micro-bridges. The electrical measurement of both reference SiNWs and SiNWs at micro-bridges was carried out, followed by the optical profiling of the micro-bridges with embedded SiNWs. N-type SiNWs with doping of 1×1020 ion/cm3 exhibit a strong dependence on temperature with a piezoresistive coefficient that decreased by 22.5% between 25°C to 60°C; whereas its bulk counterpart is independent of temperature across this range. The results demonstrated that thermal noise may be more detrimental to nano-scale electromechanical sensors than its bulk counterparts.

Original languageBritish English
Title of host publicationNanoscale Electromechanics and Piezoresponse Force Microscopy of Inorganic, Macromolecular and Biological Systems
PublisherMaterials Research Society
Pages61-66
Number of pages6
ISBN (Print)9781615677894
DOIs
StatePublished - 2009
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: 13 Apr 200917 Apr 2009

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1186
ISSN (Print)0272-9172

Conference

Conference2009 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period13/04/0917/04/09

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