Experimental evidence of long-range point defect-phosphorous pair diffusion in silicon

Ammar M. Nayfeh, Viktor I. Koldyaev

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


Point Defect (PD) mediated diffusion of phosphorous in silicon is studied in order to address the long standing open problem of PD-Dopant pair lifetime. A novel experimental method is suggested to increase PD-P pair lifetime for better observability and experimental resolution. In the experiment, phosphorous is implanted, followed by low temperature poly-Si deposition with in-situ doped phosphorous. The P profile shows, after low temperature (<650°C) in-situ phosphorous doped poly-Si deposition, an exponential dependence of two orders of magnitude for a significant depth scale. This indicates that the PD-P pairs survive long-range diffusion before dissociating in the Si lattice. As a result, the lifetime of PD-P pair was extracted and this provides a physical basis for TCAD simulation at the atomic scale.

Original languageBritish English
Title of host publicationCMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications
PublisherMaterials Research Society
Number of pages6
ISBN (Print)9781605111285
StatePublished - 2009
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: 13 Apr 200917 Apr 2009

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2009 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA


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