Evidence for a Type-II band alignment between cubic and hexagonal phases of GaN

X. H. Lu, P. Y. Yu, L. X. Zheng, S. J. Xu, M. H. Xie, S. Y. Tong

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Abstract

The study of photoluminescence spectra of a series of thin, undoped, hexagonal GaN films containing cubic GaN inclusions grown by molecular-beam epitaxy on 6H-SiC was presented. It was shown that an emission peak at ∼3.17 eV in thin, hexagonal GaN films exhibits behaviors typical of a spatially indirect transition. The values of the band offsets extracted from the data were in good agreement with theoretical predictions.

Original languageBritish English
Pages (from-to)1033-1035
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number7
DOIs
StatePublished - 17 Feb 2003

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