Abstract
The study of photoluminescence spectra of a series of thin, undoped, hexagonal GaN films containing cubic GaN inclusions grown by molecular-beam epitaxy on 6H-SiC was presented. It was shown that an emission peak at ∼3.17 eV in thin, hexagonal GaN films exhibits behaviors typical of a spatially indirect transition. The values of the band offsets extracted from the data were in good agreement with theoretical predictions.
Original language | British English |
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Pages (from-to) | 1033-1035 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 7 |
DOIs | |
State | Published - 17 Feb 2003 |