Etch-free selective area growth of well-aligned ZnO nanorod arrays by economical polymer mask for large-area solar cell applications

Qurashi Ahsanulhaq, Jin Hwan Kim, Yoon Bong Hahn

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

A facile and cost effective solution method was used for the large-scale selective area growth of well-aligned ZnO nanorod arrays (NRAs) on a pre-patterned ZnO/Si. Conventional photolithography is employed to develop negative and positive circular ZnO NRAs micro-patterns with the help of low cost and economical flexible photo (polymer) mask. Unlike complex photolithography procedures, our patterning process does not require wet or dry-etching processes, and thus prove to be a simple, fast and low cost technique. Field emission scanning electron microscopy analysis reveals that the selectively grown ZnO nanorods have an average diameter and length of ∼55±5 and ∼650±50 nm. The structural analysis of ZnO nanorods showed that the nanorods were single-crystalline and grown along the c-axis direction. The photoluminescence spectrum shows a strong ultra violet emission at 381 nm and a broad deep-level visible emission at 580 nm. Such large-sized ZnO patterned substrate will be effective in light trapping and localized surface trapping, which can lead to significant enhancement in light absorption of solar cells.

Original languageBritish English
Pages (from-to)476-481
Number of pages6
JournalSolar Energy Materials and Solar Cells
Volume98
DOIs
StatePublished - Mar 2012

Keywords

  • Etch-free patterning
  • Photopolymer mask
  • Structural and optical properties
  • ZnO nanorods

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