Energy scaling of compositional disorder in Ga(N,P,As)/GaP quantum well structures

K. Jandieri, M. K. Shakfa, S. Liebich, M. Zimprich, B. Kunert, C. Karcher, A. Chernikov, K. Volz, W. Stolz, M. Koch, S. Chatterjee, W. Heimbrodt, F. Gebhard, S. D. Baranovskii

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In many-component semiconductor heterostructures photoluminescence (PL) is strongly affected by the disorder potentials caused by compositional fluctuations. We present an experimental study on the temperature-dependent PL in the Ga(N,P,As)/GaP quantum well which indicates the intriguing feature that the energy scale of the disorder decreases with increasing concentration of the fluctuating compositional component (nitrogen). This effect strongly suggests that the impact on the band structure and the effective mass both decrease as the N concentration increases. This conclusion is supported by theoretical estimates using the analytical theory of compositional fluctuations in mixed crystals.

Original languageBritish English
Article number125318
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number12
StatePublished - 21 Sep 2012


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