Energy scale of compositional disorder in Ga(AsBi)

We report on a study of compositional disorder in Ga(AsBi) structures. Temperature-dependent photoluminescence measurements on Ga(AsBi)/GaAs heterostructures with different Bi contents are performed. Experimental observations show an essentially non-monotonous dependence of the energy scale of disorder on the Bi content. Our theoretical analysis concludes that this peculiar behavior is a consequence of an essential bowing of the valence band edge as a function of Bi content and of a specific compositional dependence of the hole effective mass in Ga(AsBi) compounds.