@inproceedings{cb71774c4d5b4031acec29176f59c10b,
title = "Electro-thermal modeling of high power IGBT module short-circuits with experimental validation",
abstract = "A novel Insulated Gate Bipolar Transistor (IGBT) electrothermal modeling approach involving PSpice and AN SYS/Icepak with both high accuracy and simulation speed has been presented to study short-circuit of a 1.7 kV/1 kA commercial IGBT module. The approach successfully predicts the current and temperature distribution inside the chip of power IGBT modules. The simulation result is further validated using a 6 kA/1.1 kV non-destructive tester. The experimental validation demonstrates the modeling approach's capability for reliable design of high power IGBT power modules given electrical/thermal behavior under severe conditions.",
keywords = "Electro-Thermal Model, Insulated Gate Bipolar Transistor (IGBT), Power Module, Short-circuit",
author = "Rui Wu and Francesco Iannuzzo and Huai Wang and Frede Blaabjerg",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 61st Annual Reliability and Maintainability Symposium, RAMS 2015 ; Conference date: 26-01-2015 Through 29-01-2015",
year = "2015",
month = may,
day = "8",
doi = "10.1109/RAMS.2015.7105151",
language = "British English",
series = "Proceedings - Annual Reliability and Maintainability Symposium",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "RAMS 2015 - 61st Annual Reliability and Maintainability Symposium, Proceedings and Tutorials 2015",
address = "United States",
}