Electric-field distribution in a quantum superlattice with an injecting contact: Exact solution

V. A. Maksimenko; V. V. Makarov; A. A. Koronovskii; A. E. Hramov; R. Venckevičius; G. Valušis; A. G. Balanov; F. V. Kusmartsev; K. N. Alekseev

doi:10.1134/S0021364016070080

Electric-field distribution in a quantum superlattice with an injecting contact: Exact solution

V. A. Maksimenko, V. V. Makarov, A. A. Koronovskii, A. E. Hramov, R. Venckevičius, G. Valušis, A. G. Balanov, F. V. Kusmartsev, K. N. Alekseev

Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A very simple model describing steady-state electron transport along a quantum superlattice of a finite length taking into account an arbitrary electrical characteristic of the injecting contact is considered. In the singleminiband approximation, exact formulas for the spatial distribution of the electric field in the superlattice are derived for different types of contact. Conditions under which the field is uniform are identified. Analytical expressions for the current–voltage characteristics are obtained. In the context of the developed theory, the possibility of attaining uniform-field conditions in a diode structure with a natural silicon-carbide superlattice is discussed.

Original language	British English
Pages (from-to)	465-470
Number of pages	6
Journal	JETP Letters
Volume	103
Issue number	7
DOIs	https://doi.org/10.1134/S0021364016070080
State	Published - 1 Apr 2016

Access to Document

10.1134/S0021364016070080

Cite this

@article{0fc18d34c7374f73a787efa5a2f09675,

title = "Electric-field distribution in a quantum superlattice with an injecting contact: Exact solution",

abstract = "A very simple model describing steady-state electron transport along a quantum superlattice of a finite length taking into account an arbitrary electrical characteristic of the injecting contact is considered. In the singleminiband approximation, exact formulas for the spatial distribution of the electric field in the superlattice are derived for different types of contact. Conditions under which the field is uniform are identified. Analytical expressions for the current–voltage characteristics are obtained. In the context of the developed theory, the possibility of attaining uniform-field conditions in a diode structure with a natural silicon-carbide superlattice is discussed.",

author = "Maksimenko, {V. A.} and Makarov, {V. V.} and Koronovskii, {A. A.} and Hramov, {A. E.} and R. Venckevi{\v c}ius and G. Valu{\v s}is and Balanov, {A. G.} and Kusmartsev, {F. V.} and Alekseev, {K. N.}",

note = "Publisher Copyright: {\textcopyright} 2016, Pleiades Publishing, Inc.",

year = "2016",

month = apr,

day = "1",

doi = "10.1134/S0021364016070080",

language = "British English",

volume = "103",

pages = "465--470",

journal = "JETP Letters",

issn = "0021-3640",

publisher = "Pleiades Publishing",

number = "7",

}

TY - JOUR

T1 - Electric-field distribution in a quantum superlattice with an injecting contact

T2 - Exact solution

AU - Maksimenko, V. A.

AU - Makarov, V. V.

AU - Koronovskii, A. A.

AU - Hramov, A. E.

AU - Venckevičius, R.

AU - Valušis, G.

AU - Balanov, A. G.

AU - Kusmartsev, F. V.

AU - Alekseev, K. N.

PY - 2016/4/1

Y1 - 2016/4/1

N2 - A very simple model describing steady-state electron transport along a quantum superlattice of a finite length taking into account an arbitrary electrical characteristic of the injecting contact is considered. In the singleminiband approximation, exact formulas for the spatial distribution of the electric field in the superlattice are derived for different types of contact. Conditions under which the field is uniform are identified. Analytical expressions for the current–voltage characteristics are obtained. In the context of the developed theory, the possibility of attaining uniform-field conditions in a diode structure with a natural silicon-carbide superlattice is discussed.

AB - A very simple model describing steady-state electron transport along a quantum superlattice of a finite length taking into account an arbitrary electrical characteristic of the injecting contact is considered. In the singleminiband approximation, exact formulas for the spatial distribution of the electric field in the superlattice are derived for different types of contact. Conditions under which the field is uniform are identified. Analytical expressions for the current–voltage characteristics are obtained. In the context of the developed theory, the possibility of attaining uniform-field conditions in a diode structure with a natural silicon-carbide superlattice is discussed.

UR - http://www.scopus.com/inward/record.url?scp=84975678140&partnerID=8YFLogxK

U2 - 10.1134/S0021364016070080

DO - 10.1134/S0021364016070080

M3 - Article

AN - SCOPUS:84975678140

SN - 0021-3640

VL - 103

SP - 465

EP - 470

JO - JETP Letters

JF - JETP Letters

IS - 7

ER -

Electric-field distribution in a quantum superlattice with an injecting contact: Exact solution

Abstract

Access to Document

Other files and links

Fingerprint

Cite this