Abstract
The eigenstates of the coupled-band Luttinger Hamiltonian are used to derive modified optical Bloch equations for strained layer semiconductor heterostructures. An average effective-mass approximation is introduced, and the single-plasmon-pole approximation for the screened Coulomb interaction is extended for the multiplesubband case. Spectra of the optical absorption/gain and of the antiguiding (linewidth enhancement) factor are computed by use of a high-density Padg approximation for the quantum-well susceptibility. We compare results for various strained and unstrained systems.
| Original language | British English |
|---|---|
| Pages (from-to) | 765-773 |
| Number of pages | 9 |
| Journal | Journal of the Optical Society of America B: Optical Physics |
| Volume | 10 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 1993 |