Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality

Ammar Nayfeh; Chi On Chui; Krishna C. Saraswat; Takao Yonehara

Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality

Ammar Nayfeh
, Chi On Chui
, Krishna C. Saraswat
, Takao Yonehara

Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

We have studied the effect of hydrogen annealing on the surface roughness of Germanium (Ge) layers grown by CVD on silicon using atomic force microscopy (AFM) and cross-sectional High Resolution Scanning Electron Microscopy (HR-SEM). Our results indicate a strong reduction of roughness that approaches 90 percent at 825°C. The smoother Ge surface allowed for the fabrication metal-oxide-semiconductor (MOS) capacitors using germanium oxynitride (GeO _xN _y) as the gate dielectric. Electrical quality was studied using high frequency capacitance-voltage characteristic of epi-Ge showing negligible hysteresis. We discuss the results in terms of Ge-H cluster formation, which lowers the diffusion barrier, allowing for higher diffusivity and surface mobility. The temperature dependence shows tapering off for temperatures exceeding 825°C, indicating a barrier reduction of ∼70 meV.

Original language	British English
Pages	1189-1192
Number of pages	4
State	Published - 2004
Event	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States Duration: 3 Oct 2004 → 8 Oct 2004

Conference

Conference	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
Country/Territory	United States
City	Honolulu, HI
Period	3/10/04 → 8/10/04

Cite this

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title = "Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality",

abstract = "We have studied the effect of hydrogen annealing on the surface roughness of Germanium (Ge) layers grown by CVD on silicon using atomic force microscopy (AFM) and cross-sectional High Resolution Scanning Electron Microscopy (HR-SEM). Our results indicate a strong reduction of roughness that approaches 90 percent at 825°C. The smoother Ge surface allowed for the fabrication metal-oxide-semiconductor (MOS) capacitors using germanium oxynitride (GeO xN y) as the gate dielectric. Electrical quality was studied using high frequency capacitance-voltage characteristic of epi-Ge showing negligible hysteresis. We discuss the results in terms of Ge-H cluster formation, which lowers the diffusion barrier, allowing for higher diffusivity and surface mobility. The temperature dependence shows tapering off for temperatures exceeding 825°C, indicating a barrier reduction of ∼70 meV.",

author = "Ammar Nayfeh and Chui, \{Chi On\} and Saraswat, \{Krishna C.\} and Takao Yonehara",

year = "2004",

language = "British English",

pages = "1189--1192",

note = "SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium ; Conference date: 03-10-2004 Through 08-10-2004",

}

Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality. / Nayfeh, Ammar; Chui, Chi On; Saraswat, Krishna C. et al.
2004. 1189-1192 Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si

T2 - SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium

AU - Nayfeh, Ammar

AU - Chui, Chi On

AU - Saraswat, Krishna C.

AU - Yonehara, Takao

PY - 2004

Y1 - 2004

N2 - We have studied the effect of hydrogen annealing on the surface roughness of Germanium (Ge) layers grown by CVD on silicon using atomic force microscopy (AFM) and cross-sectional High Resolution Scanning Electron Microscopy (HR-SEM). Our results indicate a strong reduction of roughness that approaches 90 percent at 825°C. The smoother Ge surface allowed for the fabrication metal-oxide-semiconductor (MOS) capacitors using germanium oxynitride (GeO xN y) as the gate dielectric. Electrical quality was studied using high frequency capacitance-voltage characteristic of epi-Ge showing negligible hysteresis. We discuss the results in terms of Ge-H cluster formation, which lowers the diffusion barrier, allowing for higher diffusivity and surface mobility. The temperature dependence shows tapering off for temperatures exceeding 825°C, indicating a barrier reduction of ∼70 meV.

AB - We have studied the effect of hydrogen annealing on the surface roughness of Germanium (Ge) layers grown by CVD on silicon using atomic force microscopy (AFM) and cross-sectional High Resolution Scanning Electron Microscopy (HR-SEM). Our results indicate a strong reduction of roughness that approaches 90 percent at 825°C. The smoother Ge surface allowed for the fabrication metal-oxide-semiconductor (MOS) capacitors using germanium oxynitride (GeO xN y) as the gate dielectric. Electrical quality was studied using high frequency capacitance-voltage characteristic of epi-Ge showing negligible hysteresis. We discuss the results in terms of Ge-H cluster formation, which lowers the diffusion barrier, allowing for higher diffusivity and surface mobility. The temperature dependence shows tapering off for temperatures exceeding 825°C, indicating a barrier reduction of ∼70 meV.

UR - https://www.scopus.com/pages/publications/17044425645

M3 - Paper

AN - SCOPUS:17044425645

SP - 1189

EP - 1192

Y2 - 3 October 2004 through 8 October 2004

ER -

Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality

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