Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality

Ammar Nayfeh; Chi On Chui; Krishna C. Saraswat; Takao Yonehara

doi:10.1063/1.1802381

Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality

Ammar Nayfeh
, Chi On Chui
, Krishna C. Saraswat
, Takao Yonehara

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

163 Scopus citations

Abstract

The effects of hydrogen annealing on the surface roughness of germanium layers were studied. The germanium layers were grown by chemical vapor deposition on silicon using atomic force microscopy and cross-section high resolution scanning electron microscopy (HR-SEM). It was found that hydrogen annealing enhances surface diffusivity of silicon, which results in an enhancement of the surface mobility. It was also observed that the temperature dependence shows tapering off for temperature exceeding 800 °C, indicating a barrier reduction of ∼ 92 meV.

Original language	British English
Pages (from-to)	2815-2817
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	14
DOIs	https://doi.org/10.1063/1.1802381
State	Published - 4 Oct 2004

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title = "Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality",

abstract = "The effects of hydrogen annealing on the surface roughness of germanium layers were studied. The germanium layers were grown by chemical vapor deposition on silicon using atomic force microscopy and cross-section high resolution scanning electron microscopy (HR-SEM). It was found that hydrogen annealing enhances surface diffusivity of silicon, which results in an enhancement of the surface mobility. It was also observed that the temperature dependence shows tapering off for temperature exceeding 800 °C, indicating a barrier reduction of ∼ 92 meV.",

author = "Ammar Nayfeh and Chui, \{Chi On\} and Saraswat, \{Krishna C.\} and Takao Yonehara",

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T2 - Surface roughness and electrical quality

AU - Nayfeh, Ammar

AU - Chui, Chi On

AU - Saraswat, Krishna C.

AU - Yonehara, Takao

PY - 2004/10/4

Y1 - 2004/10/4

N2 - The effects of hydrogen annealing on the surface roughness of germanium layers were studied. The germanium layers were grown by chemical vapor deposition on silicon using atomic force microscopy and cross-section high resolution scanning electron microscopy (HR-SEM). It was found that hydrogen annealing enhances surface diffusivity of silicon, which results in an enhancement of the surface mobility. It was also observed that the temperature dependence shows tapering off for temperature exceeding 800 °C, indicating a barrier reduction of ∼ 92 meV.

AB - The effects of hydrogen annealing on the surface roughness of germanium layers were studied. The germanium layers were grown by chemical vapor deposition on silicon using atomic force microscopy and cross-section high resolution scanning electron microscopy (HR-SEM). It was found that hydrogen annealing enhances surface diffusivity of silicon, which results in an enhancement of the surface mobility. It was also observed that the temperature dependence shows tapering off for temperature exceeding 800 °C, indicating a barrier reduction of ∼ 92 meV.

UR - https://www.scopus.com/pages/publications/8344282844

U2 - 10.1063/1.1802381

DO - 10.1063/1.1802381

M3 - Article

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SN - 0003-6951

VL - 85

SP - 2815

EP - 2817

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JF - Applied Physics Letters

IS - 14

ER -

Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality

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