Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering

Muntaser Al-Mansoori; Sahar Al-Shaibani; Ahlam Al-Jaeedi; Jisung Lee; Daniel Choi; Falah S. Hasoon

doi:10.1063/1.5001883

Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering

Muntaser Al-Mansoori, Sahar Al-Shaibani, Ahlam Al-Jaeedi, Jisung Lee, Daniel Choi, Falah S. Hasoon

Mechanical & Nuclear Engineering

National Energy and Water Research Center (NEWRC)

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Photovoltaic technology is one of the key answers for a better sustainable future. An important layer in the structure of common photovoltaic cells is the transparent conductive oxide. A widely applied transparent conductive oxide is tin oxide (SnO₂). The advantage of using tin oxide comes from its high stability and low cost in processing. In our study, we investigate effects of working gas flow rate and oxygen content in radio frequency (RF)-sputtering system on the growth of intrinsic SnO₂ (i-SnO₂) layers. X-ray diffraction results showed that amorphous-like with nano-crystallite structure, and the surface roughness varied from 1.715 to 3.936 nm. X-Ray photoelectron spectroscopy analysis showed different types of point defects, such as tin interstitials and oxygen vacancies, in deposited i-SnO₂ films.

Original language	British English
Article number	125105
Journal	AIP Advances
Volume	7
Issue number	12
DOIs	https://doi.org/10.1063/1.5001883
State	Published - 1 Dec 2017

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title = "Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering",

abstract = "Photovoltaic technology is one of the key answers for a better sustainable future. An important layer in the structure of common photovoltaic cells is the transparent conductive oxide. A widely applied transparent conductive oxide is tin oxide (SnO2). The advantage of using tin oxide comes from its high stability and low cost in processing. In our study, we investigate effects of working gas flow rate and oxygen content in radio frequency (RF)-sputtering system on the growth of intrinsic SnO2 (i-SnO2) layers. X-ray diffraction results showed that amorphous-like with nano-crystallite structure, and the surface roughness varied from 1.715 to 3.936 nm. X-Ray photoelectron spectroscopy analysis showed different types of point defects, such as tin interstitials and oxygen vacancies, in deposited i-SnO2 films.",

author = "Muntaser Al-Mansoori and Sahar Al-Shaibani and Ahlam Al-Jaeedi and Jisung Lee and Daniel Choi and Hasoon, {Falah S.}",

note = "Funding Information: This work was supported by Masdar Institute of Science and Technology Student Support Grant under Award No. SSG2017-000003. M.A.M acknowledges the financial support from National Energy and Water Research Center (NEWRC) – Abu Dhabi Water and Electricity Authority (ADWEA). Publisher Copyright: {\textcopyright} 2017 Author(s).",

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AU - Al-Mansoori, Muntaser

AU - Al-Shaibani, Sahar

AU - Al-Jaeedi, Ahlam

AU - Lee, Jisung

AU - Choi, Daniel

AU - Hasoon, Falah S.

N1 - Funding Information: This work was supported by Masdar Institute of Science and Technology Student Support Grant under Award No. SSG2017-000003. M.A.M acknowledges the financial support from National Energy and Water Research Center (NEWRC) – Abu Dhabi Water and Electricity Authority (ADWEA). Publisher Copyright: © 2017 Author(s).

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Photovoltaic technology is one of the key answers for a better sustainable future. An important layer in the structure of common photovoltaic cells is the transparent conductive oxide. A widely applied transparent conductive oxide is tin oxide (SnO2). The advantage of using tin oxide comes from its high stability and low cost in processing. In our study, we investigate effects of working gas flow rate and oxygen content in radio frequency (RF)-sputtering system on the growth of intrinsic SnO2 (i-SnO2) layers. X-ray diffraction results showed that amorphous-like with nano-crystallite structure, and the surface roughness varied from 1.715 to 3.936 nm. X-Ray photoelectron spectroscopy analysis showed different types of point defects, such as tin interstitials and oxygen vacancies, in deposited i-SnO2 films.

AB - Photovoltaic technology is one of the key answers for a better sustainable future. An important layer in the structure of common photovoltaic cells is the transparent conductive oxide. A widely applied transparent conductive oxide is tin oxide (SnO2). The advantage of using tin oxide comes from its high stability and low cost in processing. In our study, we investigate effects of working gas flow rate and oxygen content in radio frequency (RF)-sputtering system on the growth of intrinsic SnO2 (i-SnO2) layers. X-ray diffraction results showed that amorphous-like with nano-crystallite structure, and the surface roughness varied from 1.715 to 3.936 nm. X-Ray photoelectron spectroscopy analysis showed different types of point defects, such as tin interstitials and oxygen vacancies, in deposited i-SnO2 films.

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Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering

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