Effects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering

Muntaser Al-Mansoori, Sahar Al-Shaibani, Ahlam Al-Jaeedi, Jisung Lee, Daniel Choi, Falah S. Hasoon

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Photovoltaic technology is one of the key answers for a better sustainable future. An important layer in the structure of common photovoltaic cells is the transparent conductive oxide. A widely applied transparent conductive oxide is tin oxide (SnO2). The advantage of using tin oxide comes from its high stability and low cost in processing. In our study, we investigate effects of working gas flow rate and oxygen content in radio frequency (RF)-sputtering system on the growth of intrinsic SnO2 (i-SnO2) layers. X-ray diffraction results showed that amorphous-like with nano-crystallite structure, and the surface roughness varied from 1.715 to 3.936 nm. X-Ray photoelectron spectroscopy analysis showed different types of point defects, such as tin interstitials and oxygen vacancies, in deposited i-SnO2 films.

Original languageBritish English
Article number125105
JournalAIP Advances
Volume7
Issue number12
DOIs
StatePublished - 1 Dec 2017

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