TY - JOUR
T1 - Effects of disorder on the Curie temperature of GaMnN, GaCrN, InCrN, and InMnN diluted magnetic semiconductors
AU - Alsaad, A.
AU - Qattan, I. A.
N1 - Funding Information:
The authors would like to thank the deanship of scientific research at Jordan University of Science and Technology (JUST) for the financial support (Project #20090122 ). We would like to thank Professor Laurent Belliache at the University of Arkansas/USA for his technical support. We would like also to extend our appreciation to Fabien Bruneval at Centre d'Etudes Nucléaires de Saclay, Gif-sur-Yvette, France, for fruitful and enlightening communications and discussions.
PY - 2011/11/15
Y1 - 2011/11/15
N2 - The critical Curie temperatures of ordered and disordered diluted magnetic semiconductors based on GaN, InN, CrN, and MnN compounds are investigated using the classical Heisenberg model within the mean field approximation. The equilibrium structural lattice parameters of all the structures investigated are obtained from first principles. We show that the Curie Tc temperatures of disordered GaN and InN doped with small concentrations of Mn and Cr depends, to a great extent, on the Mn and Cr concentrations. Our calculations on these systems show that a Tc above room-temperature can be observed in these systems and it is affected greatly by the degree of disorder of Mn and Cr randomly distributed on the Ga and In sites. In addition, the ferromagnetic stability in these diluted magnetic semiconductors is studied systematically. Our results indicate that 3d Mn and Cr impurity states in GaN and InN favor the ferromagnetic state rather than the spin-glass phase.
AB - The critical Curie temperatures of ordered and disordered diluted magnetic semiconductors based on GaN, InN, CrN, and MnN compounds are investigated using the classical Heisenberg model within the mean field approximation. The equilibrium structural lattice parameters of all the structures investigated are obtained from first principles. We show that the Curie Tc temperatures of disordered GaN and InN doped with small concentrations of Mn and Cr depends, to a great extent, on the Mn and Cr concentrations. Our calculations on these systems show that a Tc above room-temperature can be observed in these systems and it is affected greatly by the degree of disorder of Mn and Cr randomly distributed on the Ga and In sites. In addition, the ferromagnetic stability in these diluted magnetic semiconductors is studied systematically. Our results indicate that 3d Mn and Cr impurity states in GaN and InN favor the ferromagnetic state rather than the spin-glass phase.
KW - Classical Heisenberg model
KW - Curie critical temperature
KW - Diluted magnetic semiconductors
KW - Disorder
KW - GaN and InN doped with Cr
KW - GaN and InN doped with Mn
UR - http://www.scopus.com/inward/record.url?scp=80054990793&partnerID=8YFLogxK
U2 - 10.1016/j.physb.2011.08.016
DO - 10.1016/j.physb.2011.08.016
M3 - Article
AN - SCOPUS:80054990793
SN - 0921-4526
VL - 406
SP - 4233
EP - 4239
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - 22
ER -