Effective antireflection properties of porous silicon nanowires for photovoltaic applications

Adel Najar; Ahmad Ali Al-Jabr; Ahmed Ben Slimane; M. A. Alsunaidi; Tien Khee Ng; Boon S. Ooi; Rachid Sougrat; Dalaver H. Anjum

doi:10.1109/SIECPC.2013.6550769

Effective antireflection properties of porous silicon nanowires for photovoltaic applications

Adel Najar
, Ahmad Ali Al-Jabr
, Ahmed Ben Slimane
, M. A. Alsunaidi
, Tien Khee Ng
, Boon S. Ooi
, Rachid Sougrat
, Dalaver H. Anjum

Physics

King Abdullah University of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

Porous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET) in the transmission electron microscope (TEM). The PSiNWs give strong photoluminescence peak at red wavelength. Ultra-low reflectance of <5% span over wavelength 250 nm to 1050 nm has been measured. The finite-difference time-domain (FDTD) method has been employed to model the optical reflectance for both Si wafer and PSiNWs. Our calculation results are in agreement with the measured reflectance from nanowires length of 6 μm and 60% porosity. The low reflectance is attributed to the effective graded index of PSiNWs and enhancement of multiple optical scattering from the pores and nanowires. PSiNW structures with low surface reflectance can potentially serve as an antireflection layer for Si-based photovoltaic devices.

Original language	British English
Title of host publication	2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013
DOIs	https://doi.org/10.1109/SIECPC.2013.6550769
State	Published - 2013
Event	2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013 - Riyadh, Saudi Arabia Duration: 27 Apr 2013 → 30 Apr 2013

Publication series

Name	2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013

Conference

Conference	2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013
Country/Territory	Saudi Arabia
City	Riyadh
Period	27/04/13 → 30/04/13

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

FDTD
metal electroless etching
Porous silicon nanowires

Access to Document

10.1109/SIECPC.2013.6550769

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Najar, A., Al-Jabr, A. A., Slimane, A. B., Alsunaidi, M. A., Ng, T. K., Ooi, B. S., Sougrat, R., & Anjum, D. H. (2013). Effective antireflection properties of porous silicon nanowires for photovoltaic applications. In 2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013 Article 6550769 (2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013). https://doi.org/10.1109/SIECPC.2013.6550769

@inproceedings{014c93bad609451d85b7db0624922a5f,

title = "Effective antireflection properties of porous silicon nanowires for photovoltaic applications",

abstract = "Porous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET) in the transmission electron microscope (TEM). The PSiNWs give strong photoluminescence peak at red wavelength. Ultra-low reflectance of <5\% span over wavelength 250 nm to 1050 nm has been measured. The finite-difference time-domain (FDTD) method has been employed to model the optical reflectance for both Si wafer and PSiNWs. Our calculation results are in agreement with the measured reflectance from nanowires length of 6 μm and 60\% porosity. The low reflectance is attributed to the effective graded index of PSiNWs and enhancement of multiple optical scattering from the pores and nanowires. PSiNW structures with low surface reflectance can potentially serve as an antireflection layer for Si-based photovoltaic devices.",

keywords = "FDTD, metal electroless etching, Porous silicon nanowires",

author = "Adel Najar and Al-Jabr, \{Ahmad Ali\} and Slimane, \{Ahmed Ben\} and Alsunaidi, \{M. A.\} and Ng, \{Tien Khee\} and Ooi, \{Boon S.\} and Rachid Sougrat and Anjum, \{Dalaver H.\}",

year = "2013",

doi = "10.1109/SIECPC.2013.6550769",

language = "British English",

isbn = "9781467361958",

series = "2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013",

booktitle = "2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013",

note = "2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013 ; Conference date: 27-04-2013 Through 30-04-2013",

}

Najar, A, Al-Jabr, AA, Slimane, AB, Alsunaidi, MA, Ng, TK, Ooi, BS, Sougrat, R & Anjum, DH 2013, Effective antireflection properties of porous silicon nanowires for photovoltaic applications. in 2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013., 6550769, 2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013, 2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013, Riyadh, Saudi Arabia, 27/04/13. https://doi.org/10.1109/SIECPC.2013.6550769

Effective antireflection properties of porous silicon nanowires for photovoltaic applications. / Najar, Adel; Al-Jabr, Ahmad Ali; Slimane, Ahmed Ben et al.
2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013. 2013. 6550769 (2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effective antireflection properties of porous silicon nanowires for photovoltaic applications

AU - Najar, Adel

AU - Al-Jabr, Ahmad Ali

AU - Slimane, Ahmed Ben

AU - Alsunaidi, M. A.

AU - Ng, Tien Khee

AU - Ooi, Boon S.

AU - Sougrat, Rachid

AU - Anjum, Dalaver H.

PY - 2013

Y1 - 2013

N2 - Porous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET) in the transmission electron microscope (TEM). The PSiNWs give strong photoluminescence peak at red wavelength. Ultra-low reflectance of <5% span over wavelength 250 nm to 1050 nm has been measured. The finite-difference time-domain (FDTD) method has been employed to model the optical reflectance for both Si wafer and PSiNWs. Our calculation results are in agreement with the measured reflectance from nanowires length of 6 μm and 60% porosity. The low reflectance is attributed to the effective graded index of PSiNWs and enhancement of multiple optical scattering from the pores and nanowires. PSiNW structures with low surface reflectance can potentially serve as an antireflection layer for Si-based photovoltaic devices.

AB - Porous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET) in the transmission electron microscope (TEM). The PSiNWs give strong photoluminescence peak at red wavelength. Ultra-low reflectance of <5% span over wavelength 250 nm to 1050 nm has been measured. The finite-difference time-domain (FDTD) method has been employed to model the optical reflectance for both Si wafer and PSiNWs. Our calculation results are in agreement with the measured reflectance from nanowires length of 6 μm and 60% porosity. The low reflectance is attributed to the effective graded index of PSiNWs and enhancement of multiple optical scattering from the pores and nanowires. PSiNW structures with low surface reflectance can potentially serve as an antireflection layer for Si-based photovoltaic devices.

KW - FDTD

KW - metal electroless etching

KW - Porous silicon nanowires

UR - https://www.scopus.com/pages/publications/84881433100

U2 - 10.1109/SIECPC.2013.6550769

DO - 10.1109/SIECPC.2013.6550769

M3 - Conference contribution

AN - SCOPUS:84881433100

SN - 9781467361958

T3 - 2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013

BT - 2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013

T2 - 2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013

Y2 - 27 April 2013 through 30 April 2013

ER -

Najar A, Al-Jabr AA, Slimane AB, Alsunaidi MA, Ng TK, Ooi BS et al. Effective antireflection properties of porous silicon nanowires for photovoltaic applications. In 2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013. 2013. 6550769. (2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013). doi: 10.1109/SIECPC.2013.6550769

Effective antireflection properties of porous silicon nanowires for photovoltaic applications

Abstract

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UN SDGs

Keywords

Access to Document

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