Effect of ZnO Interfacial Layer Grown by Atomic Layer Deposition on the Performance of Graphene/Silicon Schottky Junction Solar Cells

Aaesha Alnuaimi; Ibraheem Almansouri; Irfan Saadat; Ammar Nayfeh

doi:10.1109/PVSC.2018.8547463

Effect of ZnO Interfacial Layer Grown by Atomic Layer Deposition on the Performance of Graphene/Silicon Schottky Junction Solar Cells

Aaesha Alnuaimi
, Ibraheem Almansouri
, Irfan Saadat
, Ammar Nayfeh

Electrical Engineering

Dubai Electricity and Water Authority (DEWA)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The recent development of Gr/Si Schottky barrier solar cells (SBSC) have shown the potential to produce low cost and high efficiency solar cells. However, the performance of Gr/Si SBSC is affected by the high recombination at Gr/Si interface and the growth of native oxide that results in instability issue. By engineering the interface with zinc oxide interfacial layers grown by atomic layer deposition (ALD), we have shown an improvement in the solar cell performance and stability. The V _oc improved from 0.41V to 0.47V, the J _sc increased from 27.15mA/cm2 to 27.6mA/cm ² and the FF improved from 32.6% to 48.3% with ZnO passivation. The power conversion efficiency (PCE) increased from 3.77% to 6.28%. The results of this work revealed the potential of using zinc oxide as interfacial layers to improve the performance and stability of Gr/Si SBSC.

Original language	British English
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1777-1780
Number of pages	4
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8547463
State	Published - 26 Nov 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018

Publication series

Name	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	10/06/18 → 15/06/18

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1109/PVSC.2018.8547463

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Alnuaimi, A., Almansouri, I., Saadat, I., & Nayfeh, A. (2018). Effect of ZnO Interfacial Layer Grown by Atomic Layer Deposition on the Performance of Graphene/Silicon Schottky Junction Solar Cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 1777-1780). Article 8547463 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8547463

Alnuaimi, Aaesha ; Almansouri, Ibraheem ; Saadat, Irfan et al. / Effect of ZnO Interfacial Layer Grown by Atomic Layer Deposition on the Performance of Graphene/Silicon Schottky Junction Solar Cells. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1777-1780 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

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title = "Effect of ZnO Interfacial Layer Grown by Atomic Layer Deposition on the Performance of Graphene/Silicon Schottky Junction Solar Cells",

abstract = " The recent development of Gr/Si Schottky barrier solar cells (SBSC) have shown the potential to produce low cost and high efficiency solar cells. However, the performance of Gr/Si SBSC is affected by the high recombination at Gr/Si interface and the growth of native oxide that results in instability issue. By engineering the interface with zinc oxide interfacial layers grown by atomic layer deposition (ALD), we have shown an improvement in the solar cell performance and stability. The V oc improved from 0.41V to 0.47V, the J sc increased from 27.15mA/cm2 to 27.6mA/cm 2 and the FF improved from 32.6\% to 48.3\% with ZnO passivation. The power conversion efficiency (PCE) increased from 3.77\% to 6.28\%. The results of this work revealed the potential of using zinc oxide as interfacial layers to improve the performance and stability of Gr/Si SBSC.",

author = "Aaesha Alnuaimi and Ibraheem Almansouri and Irfan Saadat and Ammar Nayfeh",

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Alnuaimi, A, Almansouri, I, Saadat, I & Nayfeh, A 2018, Effect of ZnO Interfacial Layer Grown by Atomic Layer Deposition on the Performance of Graphene/Silicon Schottky Junction Solar Cells. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8547463, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers Inc., pp. 1777-1780, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 10/06/18. https://doi.org/10.1109/PVSC.2018.8547463

Effect of ZnO Interfacial Layer Grown by Atomic Layer Deposition on the Performance of Graphene/Silicon Schottky Junction Solar Cells. / Alnuaimi, Aaesha; Almansouri, Ibraheem; Saadat, Irfan et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1777-1780 8547463 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Almansouri, Ibraheem

AU - Saadat, Irfan

AU - Nayfeh, Ammar

PY - 2018/11/26

Y1 - 2018/11/26

N2 - The recent development of Gr/Si Schottky barrier solar cells (SBSC) have shown the potential to produce low cost and high efficiency solar cells. However, the performance of Gr/Si SBSC is affected by the high recombination at Gr/Si interface and the growth of native oxide that results in instability issue. By engineering the interface with zinc oxide interfacial layers grown by atomic layer deposition (ALD), we have shown an improvement in the solar cell performance and stability. The V oc improved from 0.41V to 0.47V, the J sc increased from 27.15mA/cm2 to 27.6mA/cm 2 and the FF improved from 32.6% to 48.3% with ZnO passivation. The power conversion efficiency (PCE) increased from 3.77% to 6.28%. The results of this work revealed the potential of using zinc oxide as interfacial layers to improve the performance and stability of Gr/Si SBSC.

AB - The recent development of Gr/Si Schottky barrier solar cells (SBSC) have shown the potential to produce low cost and high efficiency solar cells. However, the performance of Gr/Si SBSC is affected by the high recombination at Gr/Si interface and the growth of native oxide that results in instability issue. By engineering the interface with zinc oxide interfacial layers grown by atomic layer deposition (ALD), we have shown an improvement in the solar cell performance and stability. The V oc improved from 0.41V to 0.47V, the J sc increased from 27.15mA/cm2 to 27.6mA/cm 2 and the FF improved from 32.6% to 48.3% with ZnO passivation. The power conversion efficiency (PCE) increased from 3.77% to 6.28%. The results of this work revealed the potential of using zinc oxide as interfacial layers to improve the performance and stability of Gr/Si SBSC.

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M3 - Conference contribution

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BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - Institute of Electrical and Electronics Engineers Inc.

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Alnuaimi A, Almansouri I, Saadat I, Nayfeh A. Effect of ZnO Interfacial Layer Grown by Atomic Layer Deposition on the Performance of Graphene/Silicon Schottky Junction Solar Cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1777-1780. 8547463. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). doi: 10.1109/PVSC.2018.8547463

Effect of ZnO Interfacial Layer Grown by Atomic Layer Deposition on the Performance of Graphene/Silicon Schottky Junction Solar Cells

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