TY - GEN
T1 - Effect of ZnO Interfacial Layer Grown by Atomic Layer Deposition on the Performance of Graphene/Silicon Schottky Junction Solar Cells
AU - Alnuaimi, Aaesha
AU - Almansouri, Ibraheem
AU - Saadat, Irfan
AU - Nayfeh, Ammar
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/11/26
Y1 - 2018/11/26
N2 - The recent development of Gr/Si Schottky barrier solar cells (SBSC) have shown the potential to produce low cost and high efficiency solar cells. However, the performance of Gr/Si SBSC is affected by the high recombination at Gr/Si interface and the growth of native oxide that results in instability issue. By engineering the interface with zinc oxide interfacial layers grown by atomic layer deposition (ALD), we have shown an improvement in the solar cell performance and stability. The V oc improved from 0.41V to 0.47V, the J sc increased from 27.15mA/cm2 to 27.6mA/cm 2 and the FF improved from 32.6% to 48.3% with ZnO passivation. The power conversion efficiency (PCE) increased from 3.77% to 6.28%. The results of this work revealed the potential of using zinc oxide as interfacial layers to improve the performance and stability of Gr/Si SBSC.
AB - The recent development of Gr/Si Schottky barrier solar cells (SBSC) have shown the potential to produce low cost and high efficiency solar cells. However, the performance of Gr/Si SBSC is affected by the high recombination at Gr/Si interface and the growth of native oxide that results in instability issue. By engineering the interface with zinc oxide interfacial layers grown by atomic layer deposition (ALD), we have shown an improvement in the solar cell performance and stability. The V oc improved from 0.41V to 0.47V, the J sc increased from 27.15mA/cm2 to 27.6mA/cm 2 and the FF improved from 32.6% to 48.3% with ZnO passivation. The power conversion efficiency (PCE) increased from 3.77% to 6.28%. The results of this work revealed the potential of using zinc oxide as interfacial layers to improve the performance and stability of Gr/Si SBSC.
UR - http://www.scopus.com/inward/record.url?scp=85059890096&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2018.8547463
DO - 10.1109/PVSC.2018.8547463
M3 - Conference contribution
AN - SCOPUS:85059890096
T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
SP - 1777
EP - 1780
BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Y2 - 10 June 2018 through 15 June 2018
ER -
