Effect of the interface states on the key design parameters in c-Si HIT solar cells

Study the impact of the different parameters by simulation is the most important step in the way to practically fabricate an effective structure of any solar cell device. Therefore, an investigation of the thin film of Heterojunction with Intrinsic Thin layer (HIT) solar cells was conducted in different interface trap density profile which is the most influential feature. The doping levels and the thicknesses of each layer of the structure were studied in these profiles. The results have showed the dependency of the open circuit voltage (Voc) measurement and the independency of the short circuit current (Jsc) on the interface quality (Dit) of the a-Si:H(i)/c-Si. Also, the HIT solar cells with different interface qualities have showed different attitudes or slope of changes in the variations of the key design parameters. Susceptibility to change rises as the quality of the interface of the HIT solar cell increases.