Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

T. S. Drake; C. Ní Chléirigh; M. L. Lee; A. J. Pitera; E. A. Fitzgerald; D. A. Antoniadis; D. H. Anjum; J. Li; R. Hull; N. Klymko; J. L. Hoyt

doi:10.1063/1.1598649

Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

T. S. Drake, C. Ní Chléirigh, M. L. Lee, A. J. Pitera, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li, R. Hull, N. Klymko, J. L. Hoyt

Physics

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Abstract

A study was performed on effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers. The fabrication of these layers was performed by epitaxial growth of strained silicon on relaxed SiGe, wafer bonding and an etch-back technique. It was found that on using 325 nm Raman spectroscopy, no strain relaxation was observed.

Original language	British English
Pages (from-to)	875-877
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	5
DOIs	https://doi.org/10.1063/1.1598649
State	Published - 4 Aug 2003

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abstract = "A study was performed on effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers. The fabrication of these layers was performed by epitaxial growth of strained silicon on relaxed SiGe, wafer bonding and an etch-back technique. It was found that on using 325 nm Raman spectroscopy, no strain relaxation was observed.",

author = "Drake, {T. S.} and {N{\'i} Chl{\'e}irigh}, C. and Lee, {M. L.} and Pitera, {A. J.} and Fitzgerald, {E. A.} and Antoniadis, {D. A.} and Anjum, {D. H.} and J. Li and R. Hull and N. Klymko and Hoyt, {J. L.}",

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AU - Drake, T. S.

AU - Ní Chléirigh, C.

AU - Lee, M. L.

AU - Pitera, A. J.

AU - Fitzgerald, E. A.

AU - Antoniadis, D. A.

AU - Anjum, D. H.

AU - Li, J.

AU - Hull, R.

AU - Klymko, N.

AU - Hoyt, J. L.

PY - 2003/8/4

Y1 - 2003/8/4

N2 - A study was performed on effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers. The fabrication of these layers was performed by epitaxial growth of strained silicon on relaxed SiGe, wafer bonding and an etch-back technique. It was found that on using 325 nm Raman spectroscopy, no strain relaxation was observed.

AB - A study was performed on effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers. The fabrication of these layers was performed by epitaxial growth of strained silicon on relaxed SiGe, wafer bonding and an etch-back technique. It was found that on using 325 nm Raman spectroscopy, no strain relaxation was observed.

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VL - 83

SP - 875

EP - 877

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

Abstract

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