Effect of PECVD a-Si Growth Temperature on the Performance of a-Si/c-Si Solar Cells

Khadija Jumaa; Sabina Abdul Hadi; Ammar Nayfeh

doi:10.1109/PVSC40753.2019.8980566

Effect of PECVD a-Si Growth Temperature on the Performance of a-Si/c-Si Solar Cells

Khadija Jumaa
, Sabina Abdul Hadi
, Ammar Nayfeh

Electrical Engineering

University of Dubai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this work the effect of PECVD a-Si growth temperature on the performance of a-Si/c-Si solar cells is studied. Phosphorus doped amorphous silicon was deposited using PECVD at three different temperatures: 150 °C, 200 °C, and 250 °C. A thin film ALD deposited ZnO is used as the anti-reflective coating. Optical and electrical characterization of the samples is carried out, including: ellipsometry, quantum efficiency, reflectance, and current-voltage measurements. Results indicate that cells with emitter layer grown at 200 °C have the highest current density under 1 sun, along with better external quantum efficiency at wavelengths above ∼450 nm.

Original language	British English
Title of host publication	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1909-1912
Number of pages	4
ISBN (Electronic)	9781728104942
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980566
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

aSi
PECVD
Silicon
Solar

Access to Document

10.1109/PVSC40753.2019.8980566

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Jumaa, K., Hadi, S. A., & Nayfeh, A. (2019). Effect of PECVD a-Si Growth Temperature on the Performance of a-Si/c-Si Solar Cells. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 1909-1912). Article 8980566 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8980566

@inproceedings{4724905cb99b41c1934d48ed78916c69,

title = "Effect of PECVD a-Si Growth Temperature on the Performance of a-Si/c-Si Solar Cells",

abstract = "In this work the effect of PECVD a-Si growth temperature on the performance of a-Si/c-Si solar cells is studied. Phosphorus doped amorphous silicon was deposited using PECVD at three different temperatures: 150 °C, 200 °C, and 250 °C. A thin film ALD deposited ZnO is used as the anti-reflective coating. Optical and electrical characterization of the samples is carried out, including: ellipsometry, quantum efficiency, reflectance, and current-voltage measurements. Results indicate that cells with emitter layer grown at 200 °C have the highest current density under 1 sun, along with better external quantum efficiency at wavelengths above ∼450 nm.",

keywords = "aSi, PECVD, Silicon, Solar",

author = "Khadija Jumaa and Hadi, \{Sabina Abdul\} and Ammar Nayfeh",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

year = "2019",

month = jun,

doi = "10.1109/PVSC40753.2019.8980566",

language = "British English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1909--1912",

booktitle = "2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019",

address = "United States",

}

Jumaa, K, Hadi, SA & Nayfeh, A 2019, Effect of PECVD a-Si Growth Temperature on the Performance of a-Si/c-Si Solar Cells. in 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019., 8980566, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 1909-1912, 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16/06/19. https://doi.org/10.1109/PVSC40753.2019.8980566

Effect of PECVD a-Si Growth Temperature on the Performance of a-Si/c-Si Solar Cells. / Jumaa, Khadija; Hadi, Sabina Abdul; Nayfeh, Ammar.
2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 1909-1912 8980566 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of PECVD a-Si Growth Temperature on the Performance of a-Si/c-Si Solar Cells

AU - Jumaa, Khadija

AU - Hadi, Sabina Abdul

AU - Nayfeh, Ammar

PY - 2019/6

Y1 - 2019/6

N2 - In this work the effect of PECVD a-Si growth temperature on the performance of a-Si/c-Si solar cells is studied. Phosphorus doped amorphous silicon was deposited using PECVD at three different temperatures: 150 °C, 200 °C, and 250 °C. A thin film ALD deposited ZnO is used as the anti-reflective coating. Optical and electrical characterization of the samples is carried out, including: ellipsometry, quantum efficiency, reflectance, and current-voltage measurements. Results indicate that cells with emitter layer grown at 200 °C have the highest current density under 1 sun, along with better external quantum efficiency at wavelengths above ∼450 nm.

AB - In this work the effect of PECVD a-Si growth temperature on the performance of a-Si/c-Si solar cells is studied. Phosphorus doped amorphous silicon was deposited using PECVD at three different temperatures: 150 °C, 200 °C, and 250 °C. A thin film ALD deposited ZnO is used as the anti-reflective coating. Optical and electrical characterization of the samples is carried out, including: ellipsometry, quantum efficiency, reflectance, and current-voltage measurements. Results indicate that cells with emitter layer grown at 200 °C have the highest current density under 1 sun, along with better external quantum efficiency at wavelengths above ∼450 nm.

KW - aSi

KW - PECVD

KW - Silicon

KW - Solar

UR - https://www.scopus.com/pages/publications/85081580525

U2 - 10.1109/PVSC40753.2019.8980566

DO - 10.1109/PVSC40753.2019.8980566

M3 - Conference contribution

AN - SCOPUS:85081580525

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 1909

EP - 1912

BT - 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -

Effect of PECVD a-Si Growth Temperature on the Performance of a-Si/c-Si Solar Cells

Abstract

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UN SDGs

Keywords

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