Effect of PECVD a-Si Growth Temperature on the Performance of a-Si/c-Si Solar Cells

Khadija Jumaa, Sabina Abdul Hadi, Ammar Nayfeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this work the effect of PECVD a-Si growth temperature on the performance of a-Si/c-Si solar cells is studied. Phosphorus doped amorphous silicon was deposited using PECVD at three different temperatures: 150 °C, 200 °C, and 250 °C. A thin film ALD deposited ZnO is used as the anti-reflective coating. Optical and electrical characterization of the samples is carried out, including: ellipsometry, quantum efficiency, reflectance, and current-voltage measurements. Results indicate that cells with emitter layer grown at 200 °C have the highest current density under 1 sun, along with better external quantum efficiency at wavelengths above ∼450 nm.

Original languageBritish English
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1909-1912
Number of pages4
ISBN (Electronic)9781728104942
DOIs
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: 16 Jun 201921 Jun 2019

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States
CityChicago
Period16/06/1921/06/19

Keywords

  • aSi
  • PECVD
  • Silicon
  • Solar

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