@inproceedings{4724905cb99b41c1934d48ed78916c69,
title = "Effect of PECVD a-Si Growth Temperature on the Performance of a-Si/c-Si Solar Cells",
abstract = "In this work the effect of PECVD a-Si growth temperature on the performance of a-Si/c-Si solar cells is studied. Phosphorus doped amorphous silicon was deposited using PECVD at three different temperatures: 150 °C, 200 °C, and 250 °C. A thin film ALD deposited ZnO is used as the anti-reflective coating. Optical and electrical characterization of the samples is carried out, including: ellipsometry, quantum efficiency, reflectance, and current-voltage measurements. Results indicate that cells with emitter layer grown at 200 °C have the highest current density under 1 sun, along with better external quantum efficiency at wavelengths above ∼450 nm.",
keywords = "aSi, PECVD, Silicon, Solar",
author = "Khadija Jumaa and Hadi, {Sabina Abdul} and Ammar Nayfeh",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",
year = "2019",
month = jun,
doi = "10.1109/PVSC40753.2019.8980566",
language = "British English",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1909--1912",
booktitle = "2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019",
address = "United States",
}
