Effect of mobility and band structure of hole transport layer in planar heterojunction perovskite solar cells using 2D TCAD simulation

Aaesha Alnuaimi, Ibraheem Almansouri, Ammar Nayfeh

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

In this paper, we investigate perovskite planar heterojunction solar cells using 2D physics-based TCAD simulation. The perovskite cell is modeled as an inorganic material with physics-based parameters. A planar structure consisting of TiO 2 as the electron transport material (ETM), CH 3NH 3PbI 3 - xCl x as the absorber layer, and Spiro-OmeTAD as the hole transport material (HTM) is simulated. The simulated results match published experimental results indicating the accuracy of the physics-based model. Using this model, the effect of the hole mobility and electron affinity/band gap of the hole transport layer (HTM) is investigated. The results show that in order to achieve high efficiency, the mobility of the HTM layer should exceed 10 - 4cm 2/ V s. In addition, reducing the band offset to match the valance band of the perovskite results in achieving the highest efficiency. Moreover, the results are discussed in terms of charge transport in the HTM layer and the band alignment at the HTM/perovskite interface.

Original languageBritish English
Pages (from-to)1110-1118
Number of pages9
JournalJournal of Computational Electronics
Volume15
Issue number3
DOIs
StatePublished - 1 Sep 2016

Keywords

  • Perovskite
  • Photovoltaics
  • Simulation
  • Solar cells
  • TCAD

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