@inproceedings{a9ab44f2550143cdb03e9723c0ea53f7,
title = "Effect of metal contact size on the metal-semiconductor junction characteristics",
abstract = "Metal-semiconductor (M-S) contacts at subnanometer scale have exhibited interesting Schottky characteristics. The observed rectification behavior cannot be explained in the light of the conventional planar-Schottky model and needs to consider the Physics of nano-Schottky junction at very small dimensions. In this work, the effect of M-S contact size on the (1-V) characteristic is investigated. We used a modified nano-Schottky model to calculate the new depletion width, the enhanced surface potential, and the enhanced electric field at the interface which significantly affect the (I-V) characteristic. The experimental (I-V) plot for 7 nm metal tip was used to fit the parameters in the nano-Schottky model. The nano-Schottky model was used to simulate (I-V) plots for various diameters of metal tip contacts (7-100 nm). The results clearly demonstrate the transition in the (I-V) Schottky reversed rectification behavior from sub-10 nm contacts to the conventional (I-V) Schottky behavior at around 100 nm contacts.",
author = "Patole, \{Shashikant P.\} and Ahmed Ali and Fatmah Alkindi and Moh'D Rezeq",
note = "Funding Information: This research was supported by Khalifa University CIRA internal fund. Publisher Copyright: {\textcopyright} 2018 IEEE.; 18th International Conference on Nanotechnology, NANO 2018 ; Conference date: 23-07-2018 Through 26-07-2018",
year = "2019",
month = jan,
day = "24",
doi = "10.1109/NANO.2018.8626418",
language = "British English",
series = "Proceedings of the IEEE Conference on Nanotechnology",
publisher = "IEEE Computer Society",
booktitle = "18th International Conference on Nanotechnology, NANO 2018",
address = "United States",
}