Effect of low temperature GaAs nucleation on the growth of GaN on silicon (001) during MOVPE process

L. X. Zheng; J. W. Liang; H. Yang; J. B. Li; Y. T. Wang; D. P. Xu; X. F. Li; L. H. Duan; X. W. Hu

doi:10.1557/proc-482-69

Effect of low temperature GaAs nucleation on the growth of GaN on silicon (001) during MOVPE process

L. X. Zheng, J. W. Liang, H. Yang, J. B. Li, Y. T. Wang, D. P. Xu, X. F. Li, L. H. Duan, X. W. Hu

Mechanical & Nuclear Engineering

Chinese Academy of Sciences

Research output: Contribution to journal › Conference article › peer-review

Abstract

High quality cubic GaN was grown on Silicon (001) by metallorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130 meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10-20 nm GaAs nucleation layer grown by ALE.

Original language	British English
Pages (from-to)	69-74
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	482
DOIs	https://doi.org/10.1557/proc-482-69
State	Published - 1997
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: 1 Dec 1997 → 4 Dec 1997

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@article{66f212fe95a4436ab9655c39535deddc,

title = "Effect of low temperature GaAs nucleation on the growth of GaN on silicon (001) during MOVPE process",

abstract = "High quality cubic GaN was grown on Silicon (001) by metallorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130 meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10-20 nm GaAs nucleation layer grown by ALE.",

author = "Zheng, {L. X.} and Liang, {J. W.} and H. Yang and Li, {J. B.} and Wang, {Y. T.} and Xu, {D. P.} and Li, {X. F.} and Duan, {L. H.} and Hu, {X. W.}",

year = "1997",

doi = "10.1557/proc-482-69",

language = "British English",

volume = "482",

pages = "69--74",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 01-12-1997 Through 04-12-1997",

}

TY - JOUR

T1 - Effect of low temperature GaAs nucleation on the growth of GaN on silicon (001) during MOVPE process

AU - Zheng, L. X.

AU - Liang, J. W.

AU - Yang, H.

AU - Li, J. B.

AU - Wang, Y. T.

AU - Xu, D. P.

AU - Li, X. F.

AU - Duan, L. H.

AU - Hu, X. W.

PY - 1997

Y1 - 1997

N2 - High quality cubic GaN was grown on Silicon (001) by metallorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130 meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10-20 nm GaAs nucleation layer grown by ALE.

AB - High quality cubic GaN was grown on Silicon (001) by metallorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130 meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10-20 nm GaAs nucleation layer grown by ALE.

UR - http://www.scopus.com/inward/record.url?scp=0031384149&partnerID=8YFLogxK

U2 - 10.1557/proc-482-69

DO - 10.1557/proc-482-69

M3 - Conference article

AN - SCOPUS:0031384149

SN - 0272-9172

VL - 482

SP - 69

EP - 74

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 1 December 1997 through 4 December 1997

ER -

Effect of low temperature GaAs nucleation on the growth of GaN on silicon (001) during MOVPE process

Abstract

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