@inproceedings{70f0c2e0b21f4db8a709a0a0cab24357,
title = "Effect of interface states (Dit) at the a-Si/c-Si interface on the performance of thin film a-Si/c-Si/c-Si heterojunction solar cells",
abstract = "The effect of interface states (Dit) at the a-Si/c-Si interface on the performance of a-Si(n+)/c-Si(p)/c-Si(p+) heterojunction solar cells is investigated using Physics Based TCAD simulation. Dit is simulated as Gaussian distribution with peak ranging from 1×109 cm-2 to 1×1015 cm 2. In addition, c-Si layers of 4, 3, 2, 1, and 0.5 μm are simulated to study the effect of thickness, while the lifetime of the c-Si layer is varied from 1ns to 1ms. For a 2μm c-Si layer with 100μs lifetime, the results show a drop in open-circuit voltage (Voc) from 0.68 V to 0.52 V as Dit increases from 1×109 cm-2 to 1×1015 cm-2. The efficiency drops from 8% to 6%. The short-circuit current (Jsc) does not change with Dit and is only a function of thickness and lifetime",
keywords = "Interface States, Lifetime, Photovoltaic Cells, Silicon",
author = "Aaesha Alnuaimi and Ammar Nayfeh",
year = "2012",
doi = "10.1109/PVSC.2012.6317770",
language = "British English",
isbn = "9781467300643",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
pages = "996--999",
booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",
note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",
}