Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si1xGex/crystalline-Si heterojunction solar cells

Sabina Abdul Hadi; Pouya Hashemi; Nicole Dilello; Evelina Polyzoeva; Ammar Nayfeh; Judy L. Hoyt

doi:10.1063/1.4805078

Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si_1xGe_x/crystalline-Si heterojunction solar cells

Sabina Abdul Hadi
, Pouya Hashemi
, Nicole Dilello
, Evelina Polyzoeva
, Ammar Nayfeh
, Judy L. Hoyt

Electrical Engineering

Massachusetts Institute of Technology

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The effect of germanium fraction on the effective minority carrier lifetime (τ_eff) for epitaxial Si_1xGe_x layers is extracted using measurements on amorphous(a) Si(n+)/crystalline(c)-Si _1xGe_x(p)/crystalline(c)-Si(p+) heterojunction solar cells with x = 0.25, 0.41 and 0.56. The τ_eff extracted for Si _0.75Ge_0.25 is ∼1 μs, decreasing to ∼ 40 ns for Si_0.44Ge_0.56. In addition, the band-gap voltage offset (W_oc) increases from 0.5 eV for Si to 0.65 eV for 56% Ge indicating an increase in non-radiative recombination consistent with the reduction in effective lifetime.

Original language	British English
Article number	052119
Journal	AIP Advances
Volume	3
Issue number	5
DOIs	https://doi.org/10.1063/1.4805078
State	Published - May 2013

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title = "Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si1xGex/crystalline-Si heterojunction solar cells",

abstract = "The effect of germanium fraction on the effective minority carrier lifetime (τeff) for epitaxial Si1xGex layers is extracted using measurements on amorphous(a) Si(n+)/crystalline(c)-Si 1xGex(p)/crystalline(c)-Si(p+) heterojunction solar cells with x = 0.25, 0.41 and 0.56. The τeff extracted for Si 0.75Ge0.25 is ∼1 μs, decreasing to ∼ 40 ns for Si0.44Ge0.56. In addition, the band-gap voltage offset (Woc) increases from 0.5 eV for Si to 0.65 eV for 56\% Ge indicating an increase in non-radiative recombination consistent with the reduction in effective lifetime.",

author = "\{Abdul Hadi\}, Sabina and Pouya Hashemi and Nicole Dilello and Evelina Polyzoeva and Ammar Nayfeh and Hoyt, \{Judy L.\}",

year = "2013",

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doi = "10.1063/1.4805078",

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volume = "3",

journal = "AIP Advances",

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T1 - Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si1xGex/crystalline-Si heterojunction solar cells

AU - Abdul Hadi, Sabina

AU - Hashemi, Pouya

AU - Dilello, Nicole

AU - Polyzoeva, Evelina

AU - Nayfeh, Ammar

AU - Hoyt, Judy L.

PY - 2013/5

Y1 - 2013/5

N2 - The effect of germanium fraction on the effective minority carrier lifetime (τeff) for epitaxial Si1xGex layers is extracted using measurements on amorphous(a) Si(n+)/crystalline(c)-Si 1xGex(p)/crystalline(c)-Si(p+) heterojunction solar cells with x = 0.25, 0.41 and 0.56. The τeff extracted for Si 0.75Ge0.25 is ∼1 μs, decreasing to ∼ 40 ns for Si0.44Ge0.56. In addition, the band-gap voltage offset (Woc) increases from 0.5 eV for Si to 0.65 eV for 56% Ge indicating an increase in non-radiative recombination consistent with the reduction in effective lifetime.

AB - The effect of germanium fraction on the effective minority carrier lifetime (τeff) for epitaxial Si1xGex layers is extracted using measurements on amorphous(a) Si(n+)/crystalline(c)-Si 1xGex(p)/crystalline(c)-Si(p+) heterojunction solar cells with x = 0.25, 0.41 and 0.56. The τeff extracted for Si 0.75Ge0.25 is ∼1 μs, decreasing to ∼ 40 ns for Si0.44Ge0.56. In addition, the band-gap voltage offset (Woc) increases from 0.5 eV for Si to 0.65 eV for 56% Ge indicating an increase in non-radiative recombination consistent with the reduction in effective lifetime.

UR - https://www.scopus.com/pages/publications/84878837991

U2 - 10.1063/1.4805078

DO - 10.1063/1.4805078

M3 - Article

AN - SCOPUS:84878837991

SN - 2158-3226

VL - 3

JO - AIP Advances

JF - AIP Advances

IS - 5

M1 - 052119

ER -

Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si_1xGe_x/crystalline-Si heterojunction solar cells

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