@inproceedings{4172361fe647466db55b93603bfa2008,
title = "Effect of device, size, activation energy, temperature, and frequency on memristor switching time",
abstract = "Memristor has a potential to play a big role in the electronics industry as it provides small size, low cost and low power. However, the asymmetry between the ON and OFF switching times of the device hinders the adaption of the device in modern electronics systems. The contribution of this paper is to explore the relationship between the length of the memristor and the switching times. To achieve this the nonlinear model of oxygen vacancies is used. The model also includes coupling with electron transfer. The study shows that tuning the device length can affect the switching time significantly. This paper shows that having a device length of 10-nm gives switching ON and OFF times in the range of 4s - 13ns for applied voltage of 1V - 2.3V. In additon, the obtained OFF/ON switching time ratio is 3x compared to several order of magnitudes reported inliterature for device length of 50-nm. The proposed model is also used to study the effect of changing temperature, activation energy and frequency on memristor switching time.",
keywords = "activation energy, device modeling, frequency, geometry, Memristor, temperature",
author = "Heba Abunahla and Baker Mohammad and Dirar Homouz",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 26th International Conference on Microelectronics, ICM 2014 ; Conference date: 14-12-2014 Through 17-12-2014",
year = "2014",
doi = "10.1109/ICM.2014.7071806",
language = "British English",
series = "Proceedings of the International Conference on Microelectronics, ICM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "60--63",
booktitle = "2014 26th International Conference on Microelectronics, ICM 2014",
address = "United States",
}