Effect of Cu doping on hole mobility in CdTe

Zhixun Ma, Lei Liu, Peter Y. Yu, Samuel S. Mao

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


High quality CdTe thin films grown by laser deposition technique and heavily doped with Cu have recently been reported to have resistivity and hole mobility comparable to those of bulk single crystals. To explain the experimental results we have calculated the effect of Cu on the band structure and phonon spectrum of CdTe using the density functional theory (DFT) and the linearized augmented plane wave (LAPW) method. We found that the introduction of a high density of Cu can lead to a reduction in the hole-LO phonon scattering. In addition, Cu doping can remove Cd vacancies in CdTe and thereby enhance the hole mobility in CdTe.

Original languageBritish English
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Number of pages2
StatePublished - 2009
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: 27 Jul 20081 Aug 2008

Publication series

NameAIP Conference Proceedings
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


Conference29th International Conference on Physics of Semiconductors, ICPS 29
CityRio de Janeiro


  • CdTe
  • Hole mobility


Dive into the research topics of 'Effect of Cu doping on hole mobility in CdTe'. Together they form a unique fingerprint.

Cite this