Effect of carbon diffusion on performance of thin film c-Si HIT solar cells with a-SiC passivation layer

Aaesha Alnuaimi; Vikas Kumar; Farsad Chowdhury; Ammar Nayfeh

doi:10.1109/PVSC.2014.6925129

Effect of carbon diffusion on performance of thin film c-Si HIT solar cells with a-SiC passivation layer

Aaesha Alnuaimi
, Vikas Kumar
, Farsad Chowdhury
, Ammar Nayfeh

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The effect of carbon diffusion on the performance of c-Si HIT cells with aSi_1-xC_x:H passivation layer is studied. Two HIT cells are fabricated, one with a-Si passivation layer and one with a-SiC layer. SIMS is used to quantify the carbon diffusion into cSi. The results show a significant amount of carbon at the interface and in the c-Si layer. With the carbon diffusion, the V_oc, J_sc and fill factor drop from 0.523V to 0.331V, 24 mA/cm² to 21 mA/cm² and from 56% to 21% respectively. In addition, the peak EQE drops by 4%. The dark current increases from 6.24×10^-4 mA/cm² to 3.50×10^-3 mA/cm² at V=-0.5V. Moreover, the results indicate that the carbon diffusion reduces the overall c-Si lifetime in addition to increasing the amount of D_it at the interface.

Original language	British English
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1197-1200
Number of pages	4
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6925129
State	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

amorphous materials
charge carrier lifetime
photovoltaic cells
silicon
silicon carbide

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10.1109/PVSC.2014.6925129

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Alnuaimi, A., Kumar, V., Chowdhury, F., & Nayfeh, A. (2014). Effect of carbon diffusion on performance of thin film c-Si HIT solar cells with a-SiC passivation layer. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 1197-1200). Article 6925129 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925129

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title = "Effect of carbon diffusion on performance of thin film c-Si HIT solar cells with a-SiC passivation layer",

abstract = "The effect of carbon diffusion on the performance of c-Si HIT cells with aSi1-xCx:H passivation layer is studied. Two HIT cells are fabricated, one with a-Si passivation layer and one with a-SiC layer. SIMS is used to quantify the carbon diffusion into cSi. The results show a significant amount of carbon at the interface and in the c-Si layer. With the carbon diffusion, the Voc, Jsc and fill factor drop from 0.523V to 0.331V, 24 mA/cm2 to 21 mA/cm2 and from 56\% to 21\% respectively. In addition, the peak EQE drops by 4\%. The dark current increases from 6.24×10-4 mA/cm2 to 3.50×10-3 mA/cm2 at V=-0.5V. Moreover, the results indicate that the carbon diffusion reduces the overall c-Si lifetime in addition to increasing the amount of Dit at the interface.",

keywords = "amorphous materials, charge carrier lifetime, photovoltaic cells, silicon, silicon carbide",

author = "Aaesha Alnuaimi and Vikas Kumar and Farsad Chowdhury and Ammar Nayfeh",

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Alnuaimi, A, Kumar, V, Chowdhury, F & Nayfeh, A 2014, Effect of carbon diffusion on performance of thin film c-Si HIT solar cells with a-SiC passivation layer. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925129, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 1197-1200, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14. https://doi.org/10.1109/PVSC.2014.6925129

Effect of carbon diffusion on performance of thin film c-Si HIT solar cells with a-SiC passivation layer. / Alnuaimi, Aaesha; Kumar, Vikas; Chowdhury, Farsad et al.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1197-1200 6925129 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of carbon diffusion on performance of thin film c-Si HIT solar cells with a-SiC passivation layer

AU - Alnuaimi, Aaesha

AU - Kumar, Vikas

AU - Chowdhury, Farsad

AU - Nayfeh, Ammar

PY - 2014/10/15

Y1 - 2014/10/15

N2 - The effect of carbon diffusion on the performance of c-Si HIT cells with aSi1-xCx:H passivation layer is studied. Two HIT cells are fabricated, one with a-Si passivation layer and one with a-SiC layer. SIMS is used to quantify the carbon diffusion into cSi. The results show a significant amount of carbon at the interface and in the c-Si layer. With the carbon diffusion, the Voc, Jsc and fill factor drop from 0.523V to 0.331V, 24 mA/cm2 to 21 mA/cm2 and from 56% to 21% respectively. In addition, the peak EQE drops by 4%. The dark current increases from 6.24×10-4 mA/cm2 to 3.50×10-3 mA/cm2 at V=-0.5V. Moreover, the results indicate that the carbon diffusion reduces the overall c-Si lifetime in addition to increasing the amount of Dit at the interface.

AB - The effect of carbon diffusion on the performance of c-Si HIT cells with aSi1-xCx:H passivation layer is studied. Two HIT cells are fabricated, one with a-Si passivation layer and one with a-SiC layer. SIMS is used to quantify the carbon diffusion into cSi. The results show a significant amount of carbon at the interface and in the c-Si layer. With the carbon diffusion, the Voc, Jsc and fill factor drop from 0.523V to 0.331V, 24 mA/cm2 to 21 mA/cm2 and from 56% to 21% respectively. In addition, the peak EQE drops by 4%. The dark current increases from 6.24×10-4 mA/cm2 to 3.50×10-3 mA/cm2 at V=-0.5V. Moreover, the results indicate that the carbon diffusion reduces the overall c-Si lifetime in addition to increasing the amount of Dit at the interface.

KW - amorphous materials

KW - charge carrier lifetime

KW - photovoltaic cells

KW - silicon

KW - silicon carbide

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BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Alnuaimi A, Kumar V, Chowdhury F, Nayfeh A. Effect of carbon diffusion on performance of thin film c-Si HIT solar cells with a-SiC passivation layer. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 1197-1200. 6925129. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). doi: 10.1109/PVSC.2014.6925129

Effect of carbon diffusion on performance of thin film c-Si HIT solar cells with a-SiC passivation layer

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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