Effect of c-Si1-xGex thickness grown by LPCVD on the performance of thin-film a-Si/c-Si1-xGex/c-si heterojunction solar cells

Sabina Abdul Hadi; Pouya Hashemi; Nicole DiLello; Ammar Nayfeh; Judy L. Hoyt

doi:10.1557/opl.2012.1163

Effect of c-Si_1-xGe_x thickness grown by LPCVD on the performance of thin-film a-Si/c-Si_1-xGe_x/c-si heterojunction solar cells

Sabina Abdul Hadi, Pouya Hashemi, Nicole DiLello, Ammar Nayfeh, Judy L. Hoyt

Electrical Engineering

Massachusetts Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

In this paper the effect of Si_1-xGe_x absorber layer thickness on thin film a-Si:H/crystalline-Si_1-xGe_x/c-Si heterojunction solar cells (HIT cells) is studied by simulation and experiment. Cells with 1, 2 and 4 μm-thick epitaxial cap layers of p-type Si_0.59Ge_0.41 on top of 5 um Si_1-xGe_x graded buffer layers are fabricated and compared to study the effect of the absorber layer thickness. The results show no change in V_oc (0.41V) and that J_sc increases from 17.2 to 18.1 mA/cm² when the Si_0.59Ge_0.41 absorber layer thickness is increased from 1 to 4 μm. The effect of thickness on J_sc is also observed for 2 and 4 μm-thick Si and Si_0.75Ge_0.25absorber layers. Experiments and simulations show that larger Ge fractions result in a higher magnitude and smaller thickness dependence of J_sc, due to the larger absorption coefficient that increases optical carrier generation in the near surface region for larger Ge contents.

Original language	British English
Title of host publication	Nanostructured and Advanced Materials for Solar-Cell Manufacturing
Publisher	Materials Research Society
Pages	54-59
Number of pages	6
Volume	1447
ISBN (Electronic)	9781510880320
DOIs	https://doi.org/10.1557/opl.2012.1163
State	Published - 2012
Event	2012 MRS Spring Meeting - San Francisco, United States Duration: 9 Apr 2012 → 13 Apr 2012

Conference

Conference	2012 MRS Spring Meeting
Country/Territory	United States
City	San Francisco
Period	9/04/12 → 13/04/12

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10.1557/opl.2012.1163

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@inproceedings{58c695f2888b4bf7846c77d8e6974e58,

title = "Effect of c-Si1-xGex thickness grown by LPCVD on the performance of thin-film a-Si/c-Si1-xGex/c-si heterojunction solar cells",

abstract = "In this paper the effect of Si1-xGex absorber layer thickness on thin film a-Si:H/crystalline-Si1-xGex/c-Si heterojunction solar cells (HIT cells) is studied by simulation and experiment. Cells with 1, 2 and 4 μm-thick epitaxial cap layers of p-type Si0.59Ge0.41 on top of 5 um Si1-xGex graded buffer layers are fabricated and compared to study the effect of the absorber layer thickness. The results show no change in Voc (0.41V) and that Jsc increases from 17.2 to 18.1 mA/cm2 when the Si0.59Ge0.41 absorber layer thickness is increased from 1 to 4 μm. The effect of thickness on Jsc is also observed for 2 and 4 μm-thick Si and Si0.75Ge0.25absorber layers. Experiments and simulations show that larger Ge fractions result in a higher magnitude and smaller thickness dependence of Jsc, due to the larger absorption coefficient that increases optical carrier generation in the near surface region for larger Ge contents.",

author = "Hadi, {Sabina Abdul} and Pouya Hashemi and Nicole DiLello and Ammar Nayfeh and Hoyt, {Judy L.}",

note = "Publisher Copyright: {\textcopyright} 2012 Materials Research Society.; 2012 MRS Spring Meeting ; Conference date: 09-04-2012 Through 13-04-2012",

year = "2012",

doi = "10.1557/opl.2012.1163",

language = "British English",

volume = "1447",

pages = "54--59",

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publisher = "Materials Research Society",

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Hadi, SA, Hashemi, P, DiLello, N, Nayfeh, A & Hoyt, JL 2012, Effect of c-Si_1-xGe_x thickness grown by LPCVD on the performance of thin-film a-Si/c-Si_1-xGe_x/c-si heterojunction solar cells. in Nanostructured and Advanced Materials for Solar-Cell Manufacturing. vol. 1447, Materials Research Society, pp. 54-59, 2012 MRS Spring Meeting, San Francisco, United States, 9/04/12. https://doi.org/10.1557/opl.2012.1163

Effect of c-Si_1-xGe_x thickness grown by LPCVD on the performance of thin-film a-Si/c-Si_1-xGe_x/c-si heterojunction solar cells. / Hadi, Sabina Abdul; Hashemi, Pouya; DiLello, Nicole et al.
Nanostructured and Advanced Materials for Solar-Cell Manufacturing. Vol. 1447 Materials Research Society, 2012. p. 54-59.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of c-Si1-xGex thickness grown by LPCVD on the performance of thin-film a-Si/c-Si1-xGex/c-si heterojunction solar cells

AU - Hadi, Sabina Abdul

AU - Hashemi, Pouya

AU - DiLello, Nicole

AU - Nayfeh, Ammar

AU - Hoyt, Judy L.

PY - 2012

Y1 - 2012

N2 - In this paper the effect of Si1-xGex absorber layer thickness on thin film a-Si:H/crystalline-Si1-xGex/c-Si heterojunction solar cells (HIT cells) is studied by simulation and experiment. Cells with 1, 2 and 4 μm-thick epitaxial cap layers of p-type Si0.59Ge0.41 on top of 5 um Si1-xGex graded buffer layers are fabricated and compared to study the effect of the absorber layer thickness. The results show no change in Voc (0.41V) and that Jsc increases from 17.2 to 18.1 mA/cm2 when the Si0.59Ge0.41 absorber layer thickness is increased from 1 to 4 μm. The effect of thickness on Jsc is also observed for 2 and 4 μm-thick Si and Si0.75Ge0.25absorber layers. Experiments and simulations show that larger Ge fractions result in a higher magnitude and smaller thickness dependence of Jsc, due to the larger absorption coefficient that increases optical carrier generation in the near surface region for larger Ge contents.

AB - In this paper the effect of Si1-xGex absorber layer thickness on thin film a-Si:H/crystalline-Si1-xGex/c-Si heterojunction solar cells (HIT cells) is studied by simulation and experiment. Cells with 1, 2 and 4 μm-thick epitaxial cap layers of p-type Si0.59Ge0.41 on top of 5 um Si1-xGex graded buffer layers are fabricated and compared to study the effect of the absorber layer thickness. The results show no change in Voc (0.41V) and that Jsc increases from 17.2 to 18.1 mA/cm2 when the Si0.59Ge0.41 absorber layer thickness is increased from 1 to 4 μm. The effect of thickness on Jsc is also observed for 2 and 4 μm-thick Si and Si0.75Ge0.25absorber layers. Experiments and simulations show that larger Ge fractions result in a higher magnitude and smaller thickness dependence of Jsc, due to the larger absorption coefficient that increases optical carrier generation in the near surface region for larger Ge contents.

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M3 - Conference contribution

AN - SCOPUS:85128877551

VL - 1447

SP - 54

EP - 59

BT - Nanostructured and Advanced Materials for Solar-Cell Manufacturing

PB - Materials Research Society

T2 - 2012 MRS Spring Meeting

Y2 - 9 April 2012 through 13 April 2012

ER -

Effect of c-Si_1-xGe_x thickness grown by LPCVD on the performance of thin-film a-Si/c-Si_1-xGe_x/c-si heterojunction solar cells

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