Duty Cycle based Condition Monitoring of MOSFETs in Digitally-Controlled DC-DC Converters

Yingzhou Peng, Huai Wang

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    4 Scopus citations

    Abstract

    In this work, a duty cycle ratio-based condition monitoring method is proposed for the MOSFETs in digitally-controlled DC-DC power converters. It is demonstrated and proved with an example of buck converter. Theoretically, the average value of duty cycle ratio is positively related to the on-state resistance of MOSFET. Therefore, the proposed method enables the condition monitoring of the degradation of MOSFET. The impact of other factors, such as input voltage, temperature, loading and other components in buck converter, on the duty cycle ratio is also investigated. Experimental tests are performed in different situations. Both theoretical and experimental results indicate the feasibility of the proposed method for DC-DC converter applications. Compare to the conventional methods, the proposed method features non-invasive, without additional hardware and easily implementing.

    Original languageBritish English
    Title of host publicationAPEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages364-369
    Number of pages6
    ISBN (Electronic)9781728148298
    DOIs
    StatePublished - Mar 2020
    Event35th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2020 - New Orleans, United States
    Duration: 15 Mar 202019 Mar 2020

    Publication series

    NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
    Volume2020-March

    Conference

    Conference35th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2020
    Country/TerritoryUnited States
    CityNew Orleans
    Period15/03/2019/03/20

    Keywords

    • Condition Monitoring
    • DC-DC Power Converter
    • On-line
    • Power MOSFET

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