Distinct lasing operation from chirped InAs/InP quantum-dash laser

M. Z.M. Khan; T. K. Ng; Chi Sen Lee; D. H. Anjum; D. Cha; P. Bhattacharya; B. S. Ooi

doi:10.1109/JPHOT.2013.2272781

Distinct lasing operation from chirped InAs/InP quantum-dash laser

M. Z.M. Khan, T. K. Ng, Chi Sen Lee, D. H. Anjum, D. Cha, P. Bhattacharya, B. S. Ooi

Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We study the enhanced inhomogeneity across the InAs quantum-dash (Qdash) layers by incorporating a chirped AlGaInAs barrier thickness in the InAs/InP laser structure. The lasing operation is investigated via Fabry-Pérot ridge-waveguide laser characterization, which shows a peculiar behavior under quasi-continuous-wave (QCW) operation. Continuous energy transfer between different dash ensembles initiated quenching of lasing action among certain dash groups, causing a reduced intensity gap in the lasing spectra. We discuss these characteristics in terms of the quasi-zero-dimensional density of states (DOS) of dashes and the active region inhomogeneity.

Original language	British English
Article number	6557428
Journal	IEEE Photonics Journal
Volume	5
Issue number	4
DOIs	https://doi.org/10.1109/JPHOT.2013.2272781
State	Published - 2013

Keywords

Inhomogeneous broadening
Quantum dash lasers
Self-assembled quantum dot
Semiconductor lasers
Semiconductor quantum dots

Access to Document

10.1109/JPHOT.2013.2272781

Cite this

@article{002e9da615b3434199b2f57b25e0946b,

title = "Distinct lasing operation from chirped InAs/InP quantum-dash laser",

abstract = "We study the enhanced inhomogeneity across the InAs quantum-dash (Qdash) layers by incorporating a chirped AlGaInAs barrier thickness in the InAs/InP laser structure. The lasing operation is investigated via Fabry-P{\'e}rot ridge-waveguide laser characterization, which shows a peculiar behavior under quasi-continuous-wave (QCW) operation. Continuous energy transfer between different dash ensembles initiated quenching of lasing action among certain dash groups, causing a reduced intensity gap in the lasing spectra. We discuss these characteristics in terms of the quasi-zero-dimensional density of states (DOS) of dashes and the active region inhomogeneity.",

keywords = "Inhomogeneous broadening, Quantum dash lasers, Self-assembled quantum dot, Semiconductor lasers, Semiconductor quantum dots",

author = "Khan, {M. Z.M.} and Ng, {T. K.} and Lee, {Chi Sen} and Anjum, {D. H.} and D. Cha and P. Bhattacharya and Ooi, {B. S.}",

year = "2013",

doi = "10.1109/JPHOT.2013.2272781",

language = "British English",

volume = "5",

journal = "IEEE Photonics Journal",

issn = "1943-0655",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Distinct lasing operation from chirped InAs/InP quantum-dash laser

AU - Khan, M. Z.M.

AU - Ng, T. K.

AU - Lee, Chi Sen

AU - Anjum, D. H.

AU - Cha, D.

AU - Bhattacharya, P.

AU - Ooi, B. S.

PY - 2013

Y1 - 2013

N2 - We study the enhanced inhomogeneity across the InAs quantum-dash (Qdash) layers by incorporating a chirped AlGaInAs barrier thickness in the InAs/InP laser structure. The lasing operation is investigated via Fabry-Pérot ridge-waveguide laser characterization, which shows a peculiar behavior under quasi-continuous-wave (QCW) operation. Continuous energy transfer between different dash ensembles initiated quenching of lasing action among certain dash groups, causing a reduced intensity gap in the lasing spectra. We discuss these characteristics in terms of the quasi-zero-dimensional density of states (DOS) of dashes and the active region inhomogeneity.

AB - We study the enhanced inhomogeneity across the InAs quantum-dash (Qdash) layers by incorporating a chirped AlGaInAs barrier thickness in the InAs/InP laser structure. The lasing operation is investigated via Fabry-Pérot ridge-waveguide laser characterization, which shows a peculiar behavior under quasi-continuous-wave (QCW) operation. Continuous energy transfer between different dash ensembles initiated quenching of lasing action among certain dash groups, causing a reduced intensity gap in the lasing spectra. We discuss these characteristics in terms of the quasi-zero-dimensional density of states (DOS) of dashes and the active region inhomogeneity.

KW - Inhomogeneous broadening

KW - Quantum dash lasers

KW - Self-assembled quantum dot

KW - Semiconductor lasers

KW - Semiconductor quantum dots

UR - http://www.scopus.com/inward/record.url?scp=84882351216&partnerID=8YFLogxK

U2 - 10.1109/JPHOT.2013.2272781

DO - 10.1109/JPHOT.2013.2272781

M3 - Article

AN - SCOPUS:84882351216

SN - 1943-0655

VL - 5

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

IS - 4

M1 - 6557428

ER -

Distinct lasing operation from chirped InAs/InP quantum-dash laser

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this