Distinct lasing operation from chirped InAs/InP quantum-dash laser

M. Z.M. Khan, T. K. Ng, Chi Sen Lee, D. H. Anjum, D. Cha, P. Bhattacharya, B. S. Ooi

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


We study the enhanced inhomogeneity across the InAs quantum-dash (Qdash) layers by incorporating a chirped AlGaInAs barrier thickness in the InAs/InP laser structure. The lasing operation is investigated via Fabry-Pérot ridge-waveguide laser characterization, which shows a peculiar behavior under quasi-continuous-wave (QCW) operation. Continuous energy transfer between different dash ensembles initiated quenching of lasing action among certain dash groups, causing a reduced intensity gap in the lasing spectra. We discuss these characteristics in terms of the quasi-zero-dimensional density of states (DOS) of dashes and the active region inhomogeneity.

Original languageBritish English
Article number6557428
JournalIEEE Photonics Journal
Issue number4
StatePublished - 2013


  • Inhomogeneous broadening
  • Quantum dash lasers
  • Self-assembled quantum dot
  • Semiconductor lasers
  • Semiconductor quantum dots


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