Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion

W. P. Lau, X. Q. Dai, L. X. Zheng, M. H. Xie, Huasheng Wu, S. H. Xu, S. Y. Tong

Research output: Contribution to journalArticlepeer-review

Abstract

A low-energy electron diffraction (LEED) Patterson function (PF) with multiple incident angles is used to obtain three-dimensional interatomic information of hexagonal GaN(0001) grown on a (formula presented) surface. A Ga-Ga atomic pair between the Ga adlayer and the terminating Ga layer is observed in the LEED PF. This provides direct experimental evidence to support the structural model proposed by first-principles calculations. The LEED PF also shows that the GaN film has a hexagonal structure and the surface has single-bilayer steps.

Original languageBritish English
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number12
DOIs
StatePublished - 17 Mar 2003

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