Direct growth of thin Ge-on-Si layer at low temperature as a template for lattice matched GaAs based solar cells

Ghada Dushaq; Aamenah Siddiqui; Khadija Jumaa; Ammar Nayfeh; Mahmoud Rasras

doi:10.1109/PVSC.2018.8547737

Direct growth of thin Ge-on-Si layer at low temperature as a template for lattice matched GaAs based solar cells

Ghada Dushaq
, Aamenah Siddiqui
, Khadija Jumaa
, Ammar Nayfeh
, Mahmoud Rasras

Electrical Engineering

New York University Abu Dhabi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We present a growth mechanism of low temperature thin Ge films directly grown on Si substrate for GaAs based solar cells. The Ge films are grown using RF-PECVD and their structural, electrical and optical properties are tested in order to use them as a template for III-V growth. A two-step temperature technique and different GeH ₄ flow rates have been employed during the deposition process. Our optimized growth limits the defect nucleation or dislocation misfit to 50 nm at the Si/Ge interface. Morever, the measured threading dislocation density (TDD) of 700 nm thick Ge films is 1×106 cm ^-2 which paves the way to achieve high quality growth of GaAs for solar cells.

Original language	British English
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3857-3860
Number of pages	4
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8547737
State	Published - 26 Nov 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018

Publication series

Name	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	10/06/18 → 15/06/18

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

GaAs solar cell
Ge-on-Si
low temperature

Access to Document

10.1109/PVSC.2018.8547737

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Dushaq, G., Siddiqui, A., Jumaa, K., Nayfeh, A., & Rasras, M. (2018). Direct growth of thin Ge-on-Si layer at low temperature as a template for lattice matched GaAs based solar cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 3857-3860). Article 8547737 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8547737

Dushaq, Ghada ; Siddiqui, Aamenah ; Jumaa, Khadija et al. / Direct growth of thin Ge-on-Si layer at low temperature as a template for lattice matched GaAs based solar cells. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 3857-3860 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

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title = "Direct growth of thin Ge-on-Si layer at low temperature as a template for lattice matched GaAs based solar cells",

abstract = " We present a growth mechanism of low temperature thin Ge films directly grown on Si substrate for GaAs based solar cells. The Ge films are grown using RF-PECVD and their structural, electrical and optical properties are tested in order to use them as a template for III-V growth. A two-step temperature technique and different GeH 4 flow rates have been employed during the deposition process. Our optimized growth limits the defect nucleation or dislocation misfit to 50 nm at the Si/Ge interface. Morever, the measured threading dislocation density (TDD) of 700 nm thick Ge films is 1×106 cm -2 which paves the way to achieve high quality growth of GaAs for solar cells.",

keywords = "GaAs solar cell, Ge-on-Si, low temperature",

author = "Ghada Dushaq and Aamenah Siddiqui and Khadija Jumaa and Ammar Nayfeh and Mahmoud Rasras",

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Dushaq, G, Siddiqui, A, Jumaa, K, Nayfeh, A & Rasras, M 2018, Direct growth of thin Ge-on-Si layer at low temperature as a template for lattice matched GaAs based solar cells. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8547737, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers Inc., pp. 3857-3860, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 10/06/18. https://doi.org/10.1109/PVSC.2018.8547737

Direct growth of thin Ge-on-Si layer at low temperature as a template for lattice matched GaAs based solar cells. / Dushaq, Ghada; Siddiqui, Aamenah; Jumaa, Khadija et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 3857-3860 8547737 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Dushaq, Ghada

AU - Siddiqui, Aamenah

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AU - Nayfeh, Ammar

AU - Rasras, Mahmoud

PY - 2018/11/26

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N2 - We present a growth mechanism of low temperature thin Ge films directly grown on Si substrate for GaAs based solar cells. The Ge films are grown using RF-PECVD and their structural, electrical and optical properties are tested in order to use them as a template for III-V growth. A two-step temperature technique and different GeH 4 flow rates have been employed during the deposition process. Our optimized growth limits the defect nucleation or dislocation misfit to 50 nm at the Si/Ge interface. Morever, the measured threading dislocation density (TDD) of 700 nm thick Ge films is 1×106 cm -2 which paves the way to achieve high quality growth of GaAs for solar cells.

AB - We present a growth mechanism of low temperature thin Ge films directly grown on Si substrate for GaAs based solar cells. The Ge films are grown using RF-PECVD and their structural, electrical and optical properties are tested in order to use them as a template for III-V growth. A two-step temperature technique and different GeH 4 flow rates have been employed during the deposition process. Our optimized growth limits the defect nucleation or dislocation misfit to 50 nm at the Si/Ge interface. Morever, the measured threading dislocation density (TDD) of 700 nm thick Ge films is 1×106 cm -2 which paves the way to achieve high quality growth of GaAs for solar cells.

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KW - Ge-on-Si

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PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 10 June 2018 through 15 June 2018

ER -

Dushaq G, Siddiqui A, Jumaa K, Nayfeh A, Rasras M. Direct growth of thin Ge-on-Si layer at low temperature as a template for lattice matched GaAs based solar cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 3857-3860. 8547737. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). doi: 10.1109/PVSC.2018.8547737

Direct growth of thin Ge-on-Si layer at low temperature as a template for lattice matched GaAs based solar cells

Abstract

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