Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

Nazek El-Atab; Samar Alqatari; Feyza B. Oruc; Tewfic Souier; Matteo Chiesa; Ali K. Okyay; Ammar Nayfeh

doi:10.1063/1.4826583

Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

Nazek El-Atab
, Samar Alqatari
, Feyza B. Oruc
, Tewfic Souier
, Matteo Chiesa
, Ali K. Okyay
, Ammar Nayfeh

Bilkent University

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (V_ON) ∼3.5 V. The measured breakdown voltage (V_BR) and electric field (E_BR) for this diode are 5.4 V and 3.86 MV/cm, respectively.

Original language	British English
Article number	102119
Journal	AIP Advances
Volume	3
Issue number	10
DOIs	https://doi.org/10.1063/1.4826583
State	Published - Oct 2013

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title = "Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon",

abstract = "A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively.",

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T1 - Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

AU - El-Atab, Nazek

AU - Alqatari, Samar

AU - Oruc, Feyza B.

AU - Souier, Tewfic

AU - Chiesa, Matteo

AU - Okyay, Ali K.

AU - Nayfeh, Ammar

PY - 2013/10

Y1 - 2013/10

N2 - A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively.

AB - A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively.

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Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

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