Differences between the interfaces of InGaAs/GaAs and GaAs/InGaAs in superlattices

Xiao Jun Wang, Xing Jin, Zi Ping Zhang, Lian Xi Zheng, Zhi Bo Xiao, Xiong Wei Hu, Qi Ming Wang

Research output: Contribution to journalArticlepeer-review

Abstract

The InyGa1-yAs/GaAs superlattice with an InxGa1-xAs(x < y) buffer layer was grown by metal-organic chemical vapor deposition method. The well layer was subjected to a compressive strain and the barrier layer a tensile strain. However, both layers were not thicker than the calculated critical thickness based on the Matthews-Blakeslee equilibrium theory. According to the measurements of TEM, SIMS, AES, we found that the composition gradient region at the GaAs/InyGa1-yAs interface was narrower than that at the InyGa1-y As/GaAs interface; in InyGa1-yAs alloy layer, the composition near the GaAs/InyGa1-yAs interface was larger than that near the other interface. For the first time, we have explained the composition profile in these kinds of superlattices based on the indium segregation theory. In addition, a new strain relaxation model was presented to explain the differences in the smoothness between the two interfaces.

Original languageBritish English
Pages (from-to)1815-1816
Number of pages2
JournalWuli Xuebao/Acta Physica Sinica
Volume46
Issue number9
StatePublished - Sep 1997

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