Abstract
A simple and convenient method that could determine the mode growth deviation of vertical cavity surface emitting lasers (VCSEL) has been provided. The micro-spot reflection spectra of the main parts of the devices were measured through selective etching, and then the thickness deviation of these parts and their influence on the mode wavelength shift were obtained by simulative calculation. As a result, the mode position of the device grown after a process regulation has been improved greatly, and the reliable information can be provided to the mode adjusting in the device fabrication.
| Original language | British English |
|---|---|
| Pages (from-to) | 76-80 |
| Number of pages | 5 |
| Journal | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
| Volume | 19 |
| Issue number | 1 |
| State | Published - 1998 |