Design of Impact Ionization enhanced thin film c-Si HIT solar cells

Vikas Kumar; Ammar Nayfeh

doi:10.1109/PVSC.2014.6925096

Design of Impact Ionization enhanced thin film c-Si HIT solar cells

Vikas Kumar
, Ammar Nayfeh

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

This study investigates the performance of impact ionization (ii) enhanced thin film c-si solar cells using technology computer aided design (tcad) simulations. The effect of ii concerning the electrical and optical properties of the c-si solar cell is carried out. We introduce p⁺ pocket with a high doping density of the magnitude > 10¹⁸ cm^-3 to increase the electric field near the junction to values near 1 mv/cm. Using this structure the effect of ii on key solar cell parameters like J_sc, V_oc, efficiency and quantum efficiency are investigated. The simulation results show that high doping density of p⁺ pocket enhances the current density without affecting the voltage. In addition, by varying the doping concentration of the p⁺ pocket from 10¹⁸ cm^-3 to 9×10¹⁸ cm^-3 the current density increases from 18mA/cm² to 32mA/cm². In addition simulation results also show that internal quantum efficiency (iqe) can reach up to 1.89 with very highly doped p+ pocket (9×10¹⁸ cm^-3).

Original language	British English
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1059-1063
Number of pages	5
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6925096
State	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Impact Ionization
Internal Quantum Efficiency
Short circuit current density
solar cells
thin film

Access to Document

10.1109/PVSC.2014.6925096

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Cite this

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abstract = "This study investigates the performance of impact ionization (ii) enhanced thin film c-si solar cells using technology computer aided design (tcad) simulations. The effect of ii concerning the electrical and optical properties of the c-si solar cell is carried out. We introduce p+ pocket with a high doping density of the magnitude > 1018 cm-3 to increase the electric field near the junction to values near 1 mv/cm. Using this structure the effect of ii on key solar cell parameters like Jsc, Voc, efficiency and quantum efficiency are investigated. The simulation results show that high doping density of p+ pocket enhances the current density without affecting the voltage. In addition, by varying the doping concentration of the p+ pocket from 1018 cm-3 to 9×1018 cm-3 the current density increases from 18mA/cm2 to 32mA/cm2. In addition simulation results also show that internal quantum efficiency (iqe) can reach up to 1.89 with very highly doped p+ pocket (9×1018 cm-3).",

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Kumar, V & Nayfeh, A 2014, Design of Impact Ionization enhanced thin film c-Si HIT solar cells. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925096, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 1059-1063, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14. https://doi.org/10.1109/PVSC.2014.6925096

Design of Impact Ionization enhanced thin film c-Si HIT solar cells. / Kumar, Vikas; Nayfeh, Ammar.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1059-1063 6925096 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Design of Impact Ionization enhanced thin film c-Si HIT solar cells

Abstract

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UN SDGs

Keywords

Access to Document

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