@inproceedings{d6bca1f0d10a408a9032b504962eee28,
title = "Design of Impact Ionization enhanced thin film c-Si HIT solar cells",
abstract = "This study investigates the performance of impact ionization (ii) enhanced thin film c-si solar cells using technology computer aided design (tcad) simulations. The effect of ii concerning the electrical and optical properties of the c-si solar cell is carried out. We introduce p+ pocket with a high doping density of the magnitude > 1018 cm-3 to increase the electric field near the junction to values near 1 mv/cm. Using this structure the effect of ii on key solar cell parameters like Jsc, Voc, efficiency and quantum efficiency are investigated. The simulation results show that high doping density of p+ pocket enhances the current density without affecting the voltage. In addition, by varying the doping concentration of the p+ pocket from 1018 cm-3 to 9×1018 cm-3 the current density increases from 18mA/cm2 to 32mA/cm2. In addition simulation results also show that internal quantum efficiency (iqe) can reach up to 1.89 with very highly doped p+ pocket (9×1018 cm-3).",
keywords = "Impact Ionization, Internal Quantum Efficiency, Short circuit current density, solar cells, thin film",
author = "Vikas Kumar and Ammar Nayfeh",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",
year = "2014",
month = oct,
day = "15",
doi = "10.1109/PVSC.2014.6925096",
language = "British English",
series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1059--1063",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
address = "United States",
}
